W25Q80BVSSIG Winbond Electronics, W25Q80BVSSIG Datasheet - Page 22

IC FLASH 8MBIT 8SOIC

W25Q80BVSSIG

Manufacturer Part Number
W25Q80BVSSIG
Description
IC FLASH 8MBIT 8SOIC
Manufacturer
Winbond Electronics
Datasheet

Specifications of W25Q80BVSSIG

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
8M (1M x 8)
Speed
104MHz
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q4816329
T1015683

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9.2.7
The Write Disable instruction (Figure 6) resets the Write Enable Latch (WEL) bit in the Status Register to
a 0. The Write Disable instruction is entered by driving /CS low, shifting the instruction code “04h” into the
DI pin and then driving /CS high. Note that the WEL bit is automatically reset after Power-up and upon
completion of the Write Status Register, Erase/Program Security Registers, Page Program, Quad Page
Program, Sector Erase, Block Erase and Chip Erase instructions.
Write Disable instruction can also be used to invalidate the Write Enable for Volatile Status Register
instruction.
Write Disable (04h)
(IO
(IO
CLK
/CS
DO
DI
0
1
)
)
Figure 6. Write Disable Instruction Sequence Diagram
Mode 3
Mode 0
0
1
High Impedance
Instruction (04h)
2
- 22 -
3
4
5
6
7
Mode 3
Mode 0
W25Q80BV

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