MC9S08GB60ACFUE Freescale, MC9S08GB60ACFUE Datasheet - Page 53

MC9S08GB60ACFUE

Manufacturer Part Number
MC9S08GB60ACFUE
Description
Manufacturer
Freescale
Datasheet

Specifications of MC9S08GB60ACFUE

Cpu Family
HCS08
Device Core Size
8b
Frequency (max)
40MHz
Interface Type
I2C/SCI/SPI
Total Internal Ram Size
4KB
# I/os (max)
56
Number Of Timers - General Purpose
8
Operating Supply Voltage (typ)
2.5/3.3V
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
1.8/2.08V
On-chip Adc
8-chx10-bit
Instruction Set Architecture
CISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
64
Package Type
LQFP
Program Memory Type
Flash
Program Memory Size
60KB
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC9S08GB60ACFUE
Manufacturer:
EM
Quantity:
12 000
Part Number:
MC9S08GB60ACFUE
Manufacturer:
FREESCAL
Quantity:
1 045
Part Number:
MC9S08GB60ACFUE
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Part Number:
MC9S08GB60ACFUE
Manufacturer:
FREESCALE
Quantity:
20 000
Part Number:
MC9S08GB60ACFUE
0
Part Number:
MC9S08GB60ACFUER
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
4.4.4
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the flash array
does not need to be disabled between program operations. Ordinarily, when a program or erase command
is issued, an internal charge pump associated with the flash memory must be enabled to supply high
voltage to the array. Upon completion of the command, the charge pump is turned off. When a burst
program command is issued, the charge pump is enabled and then remains enabled after completion of the
burst program operation if the following two conditions are met:
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
Freescale Semiconductor
1. The next burst program command has been queued before the current program operation has
2. The next sequential address selects a byte on the same physical row as the current byte being
completed.
programmed. A row of flash memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.
Burst Program Execution
Figure 4-2. Flash Program and Erase Flowchart
0
TO BUFFER ADDRESS AND DATA
WRITE COMMAND TO FCMD
TO LAUNCH COMMAND
MC9S08GB60A Data Sheet, Rev. 2
AND CLEAR FCBEF
WRITE TO FCDIV
WRITE 1 TO FCBEF
WRITE TO FLASH
CLEAR ERROR
FACCERR ?
FACCERR ?
FPVIO OR
START
FCCF ?
DONE
1
NO
(1)
(2)
0
YES
(2)
checking FCBEF or FCCF.
Wait at least four bus cycles before
(1)
ERROR EXIT
after reset.
Only required once
Chapter 4 Memory
53

Related parts for MC9S08GB60ACFUE