MT4VDDT3232UY-6K1 Micron Technology Inc, MT4VDDT3232UY-6K1 Datasheet - Page 18

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MT4VDDT3232UY-6K1

Manufacturer Part Number
MT4VDDT3232UY-6K1
Description
MODULE DDR 128MB 167MHZ 172-DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT4VDDT3232UY-6K1

Memory Type
DDR SDRAM
Memory Size
128MB
Speed
333MT/s
Package / Case
172-UDIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
100UDIMM
Device Core Size
32b
Organization
32Mx32
Total Density
128MByte
Chip Density
256Mb
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
700mA
Number Of Elements
4
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
100
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
pdf: 09005aef808da768, source: 09005aef808d2e9a
DD4C16_32x32UG.fm - Rev. D 9/04 EN
22. The valid data window is derived by achieving
23. Each byte lane has a corresponding DQS.
24. This limit is actually a nominal value and does not
25. To maintain a valid level, the transitioning edge of
(64MB) or 70.3µs (128MB); burst refreshing or
posting by the DRAM controller greater than eight
refresh cycles is not allowed.
other specifications:
(
directly porportional with the clock duty cycle
and a practical data valid window can be derived.
The clock is allowed a maximum duty cycle varia-
tion of 45/55, beyond which functionality is
uncertain. Figure 7, Derating Data Valid Window
(
curves for duty cycles ranging between 50/50 and
45/55.
result in a fail value. CKE is HIGH during
REFRESH command period (
CKE is LOW (i.e., during standby).
the input must:
t
t
QH =
QH -
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
t
t
DQSQ), shows data valid window derating
HP -
50/50
3.750
2.500
t
QHS). The data valid window derates
49.5/50.5
-75Z/-75@
-75Z/-75@
-6 TBD
3.700
2.463
t
HP (
t
t
CK = 10ns
CK = 7.5ns
t
Figure 7: Derating Data Valid Window
CK/2),
3.650
49/51
2.425
t
RFC [MIN]) else
t
DQSQ, and
48.5/52.5
3.600
2.388
48/52
3.550
(
t
t
QH
QH -
2.350
Clock Duty Cycle
18
t
DQSQ)
47.5/53.5
3.500
26. JEDEC specifies CK and CK# input slew rate must
27. DQ and DM input slew rates must not deviate
28. V
29. The clock is allowed up to ±150ps of jitter. Each
2.313
be 1V/ns (2V/ns differentially).
from DQS by more than 10 percent. If the DQ/
DM/DQS slew rate is less than 0.5V/ns, timing
must be derated: 50ps must be added to
t
slew rate exceeds 4V/ns, functionality is uncer-
tain. For -6, slew rates must be 0.5 V/ns.
not active while any bank is active.
timing parameter is allowed to vary by the same
amount.
a. Sustain a constant slew rate from the current
b. Reach at least the target AC level.
c. After the AC target level is reached, continue to
DH for each 100mv/ns reduction in slew rate. If
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
AC level through to the target AC level, V
or V
maintain at least the target DC level, V
or V
47/53
3.450
must not vary more than 4 percent if CKE is
2.275
IH
IH
(AC).
(DC).
64MB, 128MB (x32, SR)
46.5/54.5
3.400
100-PIN DDR UDIMM
2.238
3.350
46/54
©2004 Micron Technology, Inc. All rights reserved.
2.200
45.5/55.5
3.300
2.163
3.250
45/55
t
DS and
2.125
IL
IL
(DC)
(AC)

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