MT4VDDT3232UY-6K1 Micron Technology Inc, MT4VDDT3232UY-6K1 Datasheet - Page 16

• Manufacturer Part Number: MT4VDDT3232UY-6K1
• Description: MODULE DDR 128MB 167MHZ 172-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4VDDT3232UY-6K1

• Memory Type: DDR SDRAM
• Memory Size: 128MB
• Speed: 333MT/s
• Package / Case: 172-UDIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 100UDIMM
• Device Core Size: 32b
• Organization: 32Mx32
• Total Density: 128MByte
• Chip Density: 256Mb
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 700mA
• Number Of Elements: 4
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 100
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 15: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12–15, 29, 49; notes appear on pages 17–20; 0°C
pdf: 09005aef808da768, source: 09005aef808d2e9a
DD4C16_32x32UG.fm - Rev. D 9/04 EN
AC CHARACTERISTICS
PARAMETER
ACTIVE to READ with Auto precharge command
ACTIVE to ACTIVE/AUTO REFRESH command period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (Continued)
DD
64MB
128MB
64MB
128MB
SYMBOL
t
t
WPRES
t
t
t
16
t
t
t
WPRE
t
WPST
t
t
t
t
t
XSNR
XSRD
t
RPRE
RPST
t
REFC
WTR
RCD
RRD
REFI
VTD
RAP
t
T
RFC
t
WR
na
RC
RP
A
+70°C; V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MIN
0.25
200
t
0.9
0.4
0.4
15
60
72
15
15
12
15
75
QH -
0
1
0
DD
-6
t
= V
DQSQ
MAX
70.3
15.6
140
64MB, 128MB (x32, SR)
1.1
0.6
0.6
7.8
DD
Q = +2.5V ±0.2V
100-PIN DDR UDIMM
MIN
0.25
200
0.9
0.4
0.4
20
65
75
20
20
15
15
75
t
0
1
0
QH -
-75Z/-75
©2004 Micron Technology, Inc. All rights reserved.
t
DQSQ
MAX
140.6
70.3
15.6
1.1
0.6
0.6
7.8
UNITS NOTES
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
CK
CK
CK
CK
CK
CK
18, 19
45
36
36
17
22
21
21