MT46H8M32LFB5-75:A TR Micron Technology Inc, MT46H8M32LFB5-75:A TR Datasheet - Page 70

IC DDR SDRAM 256MBIT 90VFBGA

MT46H8M32LFB5-75:A TR

Manufacturer Part Number
MT46H8M32LFB5-75:A TR
Description
IC DDR SDRAM 256MBIT 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT46H8M32LFB5-75:A TR

Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (8Mx32)
Speed
133MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Figure 42:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Command
Address
DQS
CK#
CKE
DM
DQ
CK
Power-Down Mode (Active or Precharge)
Notes:
t IS
t IS
t IS
VALID
VALID
T0
t IH
t IH
t IH
1
1. If this command is a PRECHARGE (or if the device is already in the idle state), then the
2. No column accesses are allowed to be in progress at the time power-down is entered.
3. There must be at least one clock pulse during
t CK
power-down mode shown is precharge power-down. If this command is an ACTIVE (or if at
least one row is already active), then the power-down mode shown is active power-down.
power-down
t IS
mode
Enter
NOP
T1
t CH
2
Must not exceed refresh device limits
t CL
T2
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Ta0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile DDR SDRAM
power-down
t
XP time.
mode
NOP
Ta1
Exit
3
NOP
t XP
Ta2
©2005 Micron Technology, Inc. All rights reserved.
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Timing Diagrams
Don’t Care
VALID
VALID
Tb1

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