MT46H8M32LFB5-75:A TR Micron Technology Inc, MT46H8M32LFB5-75:A TR Datasheet - Page 62

• Manufacturer Part Number: MT46H8M32LFB5-75:A TR
• Description: IC DDR SDRAM 256MBIT 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M32LFB5-75:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 18:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Parameter
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
WRITE recovery time
Internal WRITE to READ command delay
Exit power-down to first valid command
Exit SELF REFRESH to first valid command
Electrical Characteristics and Recommended AC Operating Conditions (Continued)
Notes: 1–6, 22 apply to all parameters in this table; notes appear on pages 63–65; V
CL = 2
CL = 3
Symbol
62
t
t
t
RPRE(2)
RPRE(3)
t
WPRES
t
t
t
WPRE
t
WPST
t
RPST
t
WTR
RRD
t
XSR
WR
XP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile DDR SDRAM
Min
0.25
120
0.5
0.9
0.4
0.4
12
12
0
1
1
-6
Max
1.1
1.1
0.6
0.6
–
–
–
–
–
–
–
Electrical Specifications
Min
0.25
120
0.5
0.9
0.4
0.4
15
15
0
1
1
-75
©2005 Micron Technology, Inc. All rights reserved.
DD
Max
1.1
1.1
0.6
0.6
/V
–
–
–
–
–
–
–
DD
Q = 1.70–1.95V
Units
t
t
t
t
t
t
CK
CK
ns
CK
ns
CK
ns
CK
CK
ns
Notes
14, 15
13
40