MT46H8M32LFB5-75:A TR Micron Technology Inc, MT46H8M32LFB5-75:A TR Datasheet - Page 48
![IC DDR SDRAM 256MBIT 90VFBGA](/photos/7/23/72313/mfg557-90-vfbga_sml.jpg)
MT46H8M32LFB5-75:A TR
Manufacturer Part Number
MT46H8M32LFB5-75:A TR
Description
IC DDR SDRAM 256MBIT 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT46H16M16LFBF-6A_TR.pdf
(79 pages)
Specifications of MT46H8M32LFB5-75:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (8Mx32)
Speed
133MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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Power-Down
Figure 33:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Power-Down Command (in Active or Precharge Modes)
Note:
Power-down (Figure 42 on page 70) is entered when CKE is registered LOW. If power-
down occurs when all banks are idle, this mode is referred to as precharge power-down;
if power-down occurs when there is a row active in any bank, this mode is referred to as
active power-down. Entering power-down deactivates all input and output buffers,
including CK and CK# and excluding CKE. Exiting power-down requires the device to be
at the same voltage as when it entered power-down and received a stable clock.
While in power-down, CKE LOW must be maintained at the inputs of the Mobile DDR
SDRAM, while all other input signals are “Don’t Care.” The power-down state is exited
when CKE is registered HIGH (in conjunction with a NOP or DESELECT command). A
NOP or DESELECT command must be maintained on the command bus until
satisfied.
RAS#, CAS#, WE#
RAS#, CAS#, WE#
The power-down duration is limited by the refresh requirements of the device.
BA0–BA1
A0–A12
CK#
CKE
CS#
CS#
CK
BA0,1
Don’t Care
Or
48
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile DDR SDRAM
©2005 Micron Technology, Inc. All rights reserved.
Operations
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