MT46H8M32LFB5-75:A TR Micron Technology Inc, MT46H8M32LFB5-75:A TR Datasheet - Page 44

• Manufacturer Part Number: MT46H8M32LFB5-75:A TR
• Description: IC DDR SDRAM 256MBIT 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M32LFB5-75:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 29:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-PRECHARGE – Uninterrupting
Bank a,
WRITE
Notes:
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. D
2. An uninterrupted burst of 4 is shown.
3.
4. The PRECHARGE and WRITE commands are to the same bank. However, the PRECHARGE
5. A10 is LOW with the WRITE command (auto precharge is disabled).
6. PRE = PRECHARGE command.
D
b
t
and WRITE commands may be to different banks in which case
PRECHARGE command could be applied earlier.
IN
WR is referenced from the first positive CK edge after the last data-in pair.
IN
NOP
D
T1
b
b = data-in for column b.
IN
b+1
D
D
b
IN
IN
T1n
b+1
D
IN
b+1
b+2
D
D
IN
IN
b+2
NOP
D
T2
IN
b+2
D
b+3
D
IN
IN
b+3
T2n
D
IN
b+3
D
44
IN
NOP
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile DDR SDRAM
t
NOP
T4
WR
Transitioning data
(a or all)
T5
PRE
Bank
6
t
WR is not required, and the
©2005 Micron Technology, Inc. All rights reserved.
Don’t Care
T6
NOP
Operations