MT46H8M32LFB5-75:A TR Micron Technology Inc, MT46H8M32LFB5-75:A TR Datasheet - Page 43

• Manufacturer Part Number: MT46H8M32LFB5-75:A TR
• Description: IC DDR SDRAM 256MBIT 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M32LFB5-75:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 28:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-READ – Odd Number of Data, Interrupting
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. D
2. An interrupted burst of 4 is shown; one data element is written, and three are masked.
3.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
5. DQS is required at T2 and T2n (nominal case) to register DM.
6. If the burst of 8 was used, DM and DQS would be required at T3 and T3n because the READ
t
command would not mask these two data elements.
WTR is referenced from the first positive CK edge after the last data-in.
D
IN
b
IN
b = data-in for column b; D
NOP
D
T1
b
IN
D
b
IN
T1n
NOP
T2
t
WTR
T2n
43
OUT
Bank a,
READ
Col n
T3
n = data-out for column n.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile DDR SDRAM
T4
NOP
Transitioning data
CL = 3
CL = 3
CL = 3
T5
NOP
©2005 Micron Technology, Inc. All rights reserved.
T5n
D
D
D
OUT
n
OUT
n
OUT
T6
n
NOP
Don’t Care
Operations
D
n+1
D
n+1
D
OUT
n+1
OUT
T6n
OUT