MT46H8M32LFB5-75:A TR Micron Technology Inc, MT46H8M32LFB5-75:A TR Datasheet - Page 49

• Manufacturer Part Number: MT46H8M32LFB5-75:A TR
• Description: IC DDR SDRAM 256MBIT 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M32LFB5-75:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Deep Power-Down (DPD)
Figure 34:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Deep Power-Down Command
Deep power-down is an operating mode used to achieve maximum power reduction by
eliminating the power of the memory array. Data will not be retained when the device
enters deep power-down mode.
Before entering DPD mode, the DRAM must be in all banks idle state with no activity on
the data bus (
with RAS# and CAS# HIGH at the rising edge of the clock, while CKE is LOW. CKE must
be held LOW to maintain DPD mode. The clock must be stable prior to exiting DPD
mode. This mode is exited by asserting CKE HIGH with either a NOP or DESELECT
command present on the command bus. Upon exit from DPD mode, 200µs of valid
clocks either with a NOP or DESELECT command present on the command bus are
required, and a PRECHARGE ALL command and a full DRAM initialization sequence are
required.
BA0, BA1
A0–A12
RAS#
CAS#
WE#
CKE
CS#
t
RP time must be met). This mode is entered by holding CS# and WE# LOW
Don’t Care
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile DDR SDRAM
©2005 Micron Technology, Inc. All rights reserved.
Operations