MT46H8M16LFCF-10 IT TR Micron Technology Inc, MT46H8M16LFCF-10 IT TR Datasheet - Page 61

• Manufacturer Part Number: MT46H8M16LFCF-10 IT TR
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M16LFCF-10 IT TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 38:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
COMMAND
Case 1:
Case 2:
BA0, BA1
A0–A9
t
t
AC (MIN) and
DQS
DQ
AC (MAX) and
DQS
DQ
CK#
CKE
A11
A10
DM
CK
5
1
1
Bank Read – Without Auto Precharge
t
t
IS
IS
NOP
T0
Notes:
t
DQSCK (MIN)
t
t
t
DQSCK (MAX)
6
IH
IH
t
1. D
2. BL = 4 in the case shown.
3. Disable auto precharge.
4. “don’t care” if A10 is HIGH at T5.
5. RA = row address, BA = bank address, PRE = PRECHARGE, ACT = ACTIVE.
6. NOP commands are shown for ease of illustration; other commands may be valid at these
7. The PRECHARGE command can only be applied at T5 if
8. Refer to Figure 31 on page 55 and Figure 32 on page 56 for detailed DQS and DQ timing.
IS
Bank x
t
IS
8
ACT
RA
T1
RA
RA
8
t
times.
IH
t
IH
OUT
t
CK
n = data-out from column n.
t
t
RAS
RCD
t
RC
NOP
7
T2
6
t
CH
t
CL
t
Bank x
t
READ
Col n
IS
LZ (MIN)
3
T3
2
t
IH
CL = 2
t
61
RPRE
t
t
AC (MIN)
LZ (MIN)
NOP
T4
6
t
AC (MAX)
128Mb: 8 Meg x 16 Mobile DDR SDRAM
D
t
OUT
RPRE
n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSCK (MIN)
ALL BANKS
ONE BANK
Bank x
D
n + 1
PRE
T5
OUT
D
t
OUT
DQSCK (MAX)
7
n
4
D
n + 2
T5n
OUT
D
n + 1
OUT
TRANSITIONING DATA
D
n + 3
NOP
t
T6
OUT
RPST
D
n + 2
t
RAS minimum is met.
OUT
6
t
RP
T6n
t
HZ (MAX)
t
D
n + 3
RPST
OUT
©2004 Micron Technology, Inc. All rights reserved.
NOP
T7
Timing Diagrams
6
DON’T CARE
Bank x
T8
ACT
RA
RA
RA