MT46H8M16LFCF-10 IT TR Micron Technology Inc, MT46H8M16LFCF-10 IT TR Datasheet - Page 35

• Manufacturer Part Number: MT46H8M16LFCF-10 IT TR
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M16LFCF-10 IT TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 23:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
COMMAND
ADDRESS
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
WRITE-to-READ – Interrupting
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. D
2. An interrupted burst of 4 is shown; two data elements are written.
3.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
5. DQS is required at T2 and T2n (nominal case) to register DM.
6. If the burst of 8 was used, DM and DQS would be required at T3 and T3n because the READ
t
command would not mask these two data elements.
WTR is referenced from the first positive CK edge after the last data-in pair.
IN
D
b = data-in for column b; D
b
IN
NOP
T1
D
b
IN
D
b+1
D
IN
b
IN
T1n
b+1
D
IN
D
b+1
IN
NOP
T2
t
WTR
T2n
35
Bank a,
OUT
READ
Col n
T3
n = data-out for column n.
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4
NOP
CL = 3
CL = 3
CL = 3
DON’T CARE
T5
NOP
T5n
©2004 Micron Technology, Inc. All rights reserved.
TRANSITIONING DATA
D
D
D
OUT
n
OUT
n
OUT
n
T6
NOP
D
n+1
D
n+1
D
OUT
n+1
OUT
T6n
OUT
Operations