MT46H8M16LFCF-10 IT TR Micron Technology Inc, MT46H8M16LFCF-10 IT TR Datasheet - Page 57

• Manufacturer Part Number: MT46H8M16LFCF-10 IT TR
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M16LFCF-10 IT TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 34:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
Bank Address
(BA0, BA1)
COMMAND 1
Addresses
V
DQS
CK#
CKE
A10
DD
DM
V
DQ
CK
DD
Q
Initialize and Load Mode Registers
Notes:
LVCMOS
HIGH LEVEL
T = 200µs
Power-up: V
NOP 2
1. PRE = PRECHARGE command, LMR = LOAD MODE REGISTER command, AR = AUTO REFRESH
2. NOP or DESELECT commands are required for at least 200µs.
3. Other valid commands are possible.
4. NOPs or DESELECTs are required during this time.
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DD
command, ACT = ACTIVE command, RA = Row address, BA = Bank address.
and CK stable
t IS
T0
NOP
High-Z
High-Z
t IH
t
CH
t
CK
t
CL
ALL BANKS
t IS
PRE
T1
t IH
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t RP 4
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Ta0
AR
57
t RFC 4
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Load Standard Mode Register
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Tb0
AR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t RFC 4
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t IS
t IS
t IS
BA0 = L,
BA1 = L
CODE
CODE
Tc0
LMR
t IH
t IH
t IH
Load Extended Mode
t MRD 4
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Register
BA0 = L,
BA1 = H
CODE
CODE
Td0
LMR
t MRD 4
©2004 Micron Technology, Inc. All rights reserved.
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Timing Diagrams
Te0
ACT
RA
RA
BA
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DON’T CARE
Tf0
NOP 3