MT46H8M16LFCF-10 IT TR Micron Technology Inc, MT46H8M16LFCF-10 IT TR Datasheet - Page 36

• Manufacturer Part Number: MT46H8M16LFCF-10 IT TR
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M16LFCF-10 IT TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 24:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
COMMAND
ADDRESS
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
WRITE-to-READ – Odd Number of Data, Interrupting
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. D
2. An interrupted burst of 4 is shown; one data element is written, three are masked.
3.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
5. DQS is required at T2 and T2n (nominal case) to register DM.
6. If the burst of 8 was used, DM and DQS would be required at T3 and T3n because the READ
t
command would not mask these two data elements.
WTR is referenced from the first positive CK edge after the last data-in pair.
IN
D
b
b = data-in for column b; D
IN
NOP
D
T1
b
IN
D
b
IN
T1n
NOP
T2
t
WTR
T2n
36
Bank a,
READ
OUT
Col n
T3
n = data-out for column n.
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4
NOP
CL = 3
CL = 3
CL = 3
DON’T CARE
T5
NOP
T5n
TRANSITIONING DATA
©2004 Micron Technology, Inc. All rights reserved.
D
D
D
OUT
n
OUT
n
OUT
T6
n
NOP
D
n + 1
D
n + 1
D
OUT
n + 1
OUT
T6n
OUT
Operations