MT46H8M16LFCF-10 IT TR Micron Technology Inc, MT46H8M16LFCF-10 IT TR Datasheet - Page 47

• Manufacturer Part Number: MT46H8M16LFCF-10 IT TR
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M16LFCF-10 IT TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Table 11:
Table 12:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
Parameter
Parameter/Condition
Vdd supply voltage relative to V
VddQ supply voltage relative to V
Voltage on any ball relative to V
Supply voltage
I/O supply voltage
Address and Command Inputs
Input voltage high
Input voltage low
Clock Inputs (CK, CK#)
DC input voltage
DC input differential voltage
AC input differential voltage
AC differential crossing voltage
Data Inputs
DC input high voltage
AC input high voltage
DC input low voltage
AC input low voltage
Data Outputs
DC output high voltage: Logic 1 (I
DC output low voltage: Logic 0 (I
Leakage Current
Input leakage current
Any input 0V ≤ V
(All other balls not under test = 0V)
Output leakage current
(DQs are disabled; 0V ≤ V
Absolute Maximum DC Ratings
AC/DC Electrical Characteristics and Operating Conditions
Notes: 1–5; notes appear on pages 52–54; V
IN
Notes:
≤ V
DD
OUT
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
1. V
2. Voltage on any I/O may not exceed voltage on V
≤ V
SS
SS
DD
DD
SS
OL
, V
Q)
Q
OH
DD
= 0.1mA)
= -0.1mA)
Q, and V
DD
L must be within 300mV of each other at all times.
V
Symbol
IN
V
V
, V
DD
DD
DD
OUT
Q
47
= +1.8V ±0.1V, V
Symbol
V
V
V
V
V
V
V
V
ID
ID
IH
IH
V
IL
IL
V
IOZ
V
V
V
V
DD
OH
II
DD
(
(
(
(
OL
(
(
IH
IN
IX
IL
DC
AC
DC
AC
DC
AC
Q
)
)
128Mb: 8 Meg x 16 Mobile DDR SDRAM
)
)
)
)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
–1.0
–0.5
–0.5
0.8
0.4
0.6
0.4
0.7
0.8
0.9
Min
–0.3
–0.3
–0.3
–0.3
×
× V
× V
× V
× V
× V
× V
DD
1.7
1.7
–1
–5
–
V
Q = +1.8V ±0.1V
DD
DD
DD
DD
DD
DD
DD
DD
Q.
Q
Q
Q
Q
Q
Q
Q
Max
2.3
2.3
2.3
V
0.2
V
V
V
0.6
V
V
0.3
0.2
0.1 × V
DD
DD
DD
DD
DD
DD
Electrical Specifications
Max
× V
× V
× V
× V
Q
Q
Q
Q
Q
Q
1.9
1.9
1
5
–
+ 0.3
+ 0.3
+ 0.3
+ 0.3
+ 0.3
+ 0.3
DD
DD
DD
DD
DD
©2004 Micron Technology, Inc. All rights reserved.
Q
Q
Q
Q
Q
Units
V
V
V
Units
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
25, 28, 32
25, 28, 32
25, 28, 32
25, 28, 32
Notes
Notes
25, 32
25, 32
8, 27
8, 27
9, 27
1
1
2
31
31
27