MT46H8M16LFCF-10 IT TR Micron Technology Inc, MT46H8M16LFCF-10 IT TR Datasheet - Page 46

• Manufacturer Part Number: MT46H8M16LFCF-10 IT TR
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M16LFCF-10 IT TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
4. AUTO REFRESH and LOAD MODE REGISTER commands may only be issued when all banks
5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank
6. All states and sequences not shown are illegal or reserved.
7. READs or WRITEs listed in the Command/Action column include READs or WRITEs with auto
8. Requires appropriate DM masking.
9. A WRITE command may be applied after the completion of the READ burst; otherwise, a
precharge, the precharge period begins when
charge was disabled. The access period starts with registration of the command and ends
where the precharge period (or
precharge enabled or a write with auto precharge is enabled any command to other banks
is allowed, long as that command does not interrupt the read or write data transfer already
in process. either case, all other related limitations apply (e.g., contention between read
data and write data must be avoided).
3b.
enabled, to a command to a different bank is summarized below.
CL
BL = Bust length
are idle.
represented by the current state only.
precharge enabled and READs or WRITEs with auto precharge disabled.
BURST TERMINATE must be used to end the READ burst prior to asserting a
WRITE command.
RU
= CAS latency (CL) rounded up to the next integer
From Command
This device supports concurrent auto precharge such that when a read with auto
The minimum delay from a READ or WRITE command with auto precharge
WRITE w/AP
READ w/AP
46
READ or READ w/AP
WRITE or WRITE w/AP
PRECHARGE
ACTIVE
READ or READ w/AP
WRITE or WRITE w/AP
PRECHARGE
ACTIVE
t
RP) begins.
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
To Command
t
WR ends, with
t
WR measured as if auto pre-
©2004 Micron Technology, Inc. All rights reserved.
(with Concurrent Auto
[1 + (BL/2)]
[CL
Minimum Delay
RU
Precharge)
(BL/2) ×
(BL/2)
+ (BL/2)]
1
1
1
1
Truth Tables
t
t
t
t
CK
CK
CK
CK
t
CK +
t
CK
t
CK
t
t
CK
WTR