MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 57

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

NOTE:
Table 44: WRITE Timing Parameters—Async WRITE Followed by Burst READ
Table 45: READ Timing Parameters—Async WRITE Followed by Burst READ
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
SYMBOL
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
1. Non-default BCR settings for asynchronous WRITE followed by burst READ: Fixed or variable latency; latency code two
2. When transitioning between asynchronous and variable-latency burst operations, CE# must go HIGH. CE# can stay LOW
AVH
AS
AVS
AW
BW
CVS
CW
DH
ACLK
BOE
CBPH
CEW
CLK
DQ[15:0]
LB#/UB#
A[22:0]
IN/OUT
(three clocks); WAIT active LOW; WAIT asserted during delay.
when transitioning to fixed-latency burst READs. A refresh opportunity must be provided every
nity is satisfied by either of the following two conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than 15ns.
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
MIN
IL
OH
OL
IH
IL
9.62
IH
IL
IH
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
5
1
MIN
70
70
70
2
0
5
7
0
-701
t VPH
High-Z
-701/708
VALID ADDRESS
MAX
t AS
t AVS
7.5
20
Figure 50: Asynchronous WRITE Followed by Burst READ
7
t CVS
t VP
t CW
t WC
t WP
MAX
DATA
t AVH
MIN
12.5
t DH
6
1
t WPH
t WC
-708
VALID ADDRESS
t AW
MAX
t BW
t VS
t AS
7.5
20
t DW
DATA
9
MIN
t WC
85
85
85
2
0
5
7
0
t WR
MIN
-856
15
8
1
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
-856
MAX
NOTE 2
MAX
t CBPH
7.5
11
20
UNITS
t CSP
V
V
UNITS
t SP
t CEW
t SP
ADDRESS
OH
OL
t SP
t SP t HD
ns
ns
ns
ns
ns
VALID
ns
ns
ns
ns
ns
ns
ns
ns
t HD
t HD
t CLK
High-Z
57
SYMBOL
t
t
t
t
t
SYMBOL
t
t
t
t
t
t
t
t
CSP
HD
KOH
OHZ
SP
DW
VP
VPH
VS
WC
WP
WPH
WR
t ACLK
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t BOE
MIN
3
2
2
3
OUTPUT
MIN
VALID
20
10
70
70
45
10
-701
5
0
-701/708
t KOH
MAX
8
OUTPUT
VALID
MAX
MIN
4
2
2
3
DON’T CARE
-708
OUTPUT
©2004 Micron Technology, Inc. All rights reserved.
VALID
MAX
t
CEM. A refresh opportu-
8
MIN
20
10
85
85
55
10
7
0
8 MEG x 16
MIN
-856
OUTPUT
VALID
5
2
2
3
t HD
-856
MAX
t OHZ
MAX
UNDEFINED
8
High-Z
UNITS
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns