MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 33

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

Table 16: Burst READ Cycle Timing Requirements
All tests are performed with the outputs configured for default setting of half drive strength (BCR[5:4] = 01b).
NOTE:
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
PARAMETER
Address Access Time (Fixed Latency)
ADV# Access Time (Fixed Latency)
Burst to READ Access Time (Variable Latency)
CLK to Output Delay
Address Hold from ADV# HIGH (Fixed Latency)
Burst OE# LOW to Output Delay
CE# HIGH between Subsequent Burst or Mixed-
Mode Operations
Maximum CE# Pulse Width
CE# or ADV# LOW to WAIT Valid
CLK Period
Chip Select Access Time (Fixed Latency)
CE# Setup Time to Active CLK Edge
Hold Time from Active CLK Edge
Chip Disable to DQ and WAIT High-Z Output
CLK Rise or Fall Time
CLK to WAIT Valid
Output HOLD from CLK
CLK HIGH or LOW Time
Output Disable to DQ High-Z Output
Output Enable to Low-Z Output
Setup Time to Active CLK Edge
1. A refresh opportunity must be provided every
2. Low-Z to High-Z timings are tested with the circuit shown in Figure 27 on page 31. The High-Z timings measure a 100mV
3. High-Z to Low-Z timings are tested with the circuit shown in Figure 27 on page 31. The Low-Z timings measure a 100mV
conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than 15ns.
transition from either V
transition away from the High-Z (V
OH
or V
OL
toward V
CC
Q/2) level toward either V
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
CC
Q/2.
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AA
AADV
ABA
ACLK
AVH
BOE
CBPH
CEM
CEW
CLK
CO
CSP
HD
HZ
KHKL
KHTL
KOH
KP
OHZ
OLZ
SP
t
CEM. A refresh opportunity is satisfied by either of the following two
33
MIN
9.62
2
5
1
3
2
2
3
3
3
-701
OH
MAX
or V
7.5
1.6
70
70
35
20
70
Micron Technology, Inc., reserves the right to change products or specifications without notice.
7
4
8
7
8
OL
.
MIN
12.5
2
6
1
4
2
2
4
3
3
-708
MAX
7.5
1.8
70
70
46
20
70
9
4
8
9
8
MIN
15
2
8
1
5
2
2
5
3
3
©2004 Micron Technology, Inc. All rights reserved.
-856
MAX
8 MEG x 16
7.5
2.0
85
85
55
11
20
85
11
4
8
8
UNITS
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
1
1
2
2
3