MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 24

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

Table 6:
NOTE:
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
BCR[13:11]
1. Latency is the number of clock cycles from the initiation of a burst operation until data appears. Data is transferred on
Others
the next clock cycle.
010
011
DQ[15:0]
DQ[15:0]
A[22:0]
Figure 22: Latency Counter (Variable Initial Latency, No Refresh Collision)
ADV#
CLK
LATENCY
CONFIGURATION CODE
2 (3 clocks)
3 (4 clocks)—default
Reserved
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
OH
OL
OH
OL
Variable Latency Configuration Codes
ADDRESS
VALID
Code 3
Code 2
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
(Default)
NORMAL
—
2
3
LATENCY
24
OUTPUT
VALID
COLLISION
REFRESH
1
—
4
6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OUTPUT
OUTPUT
VALID
VALID
104 (9.62ns)
66 (15ns)
MAX INPUT CLK FREQUENCY (MHz)
-701
OUTPUT
OUTPUT
VALID
—
VALID
DON’T CARE
©2004 Micron Technology, Inc. All rights reserved.
54 (18.5ns)
80 (12.5ns)
OUTPUT
OUTPUT
VALID
VALID
-708
8 MEG x 16
—
UNDEFINED
OUTPUT
OUTPUT
VALID
VALID
40 (25ns)
66 (15ns)
-856
—