MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 36

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

Timing Diagrams
Table 19: Initialization and DPD Timing Parameters
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
PARAMETER
Initialization Period (required before normal operations)
Time from DPD entry to DPD exit
CE# LOW time to exit DPD
CE#
RCR[4] = 0
Write
Vcc, VccQ = 1.7V
Figure 29: DPD Entry and Exit Timing Parameters
DPD Enabled
t DPD
Figure 28: Initialization Period
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
DPD Exit
t DPDX
SYMBOL
t
t
t
PU
DPD
DPDX
36
t
PU
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MIN
Device Initialization
10
10
-701/708
t PU
MAX
150
normal operation
Device ready for
Vcc (MIN)
MIN
10
10
-856
normal operation
©2004 Micron Technology, Inc. All rights reserved.
Device ready for
MAX
150
8 MEG x 16
UNITS
µs
µs
µs
NOTE