MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 44

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

NOTE:
Table 27: Burst READ Timing Parameters—Burst Suspend
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
SYMBOL
DQ[15:0]
t
t
t
t
t
t
1. Non-default BCR settings for READ burst suspend: Fixed or variable latency; latency code two (three clocks); WAIT active
2. CLK can be stopped LOW or HIGH, but must be static, with no LOW-to-HIGH transitions during burst suspend.
3. OE# can stay LOW during burst suspend. If OE# is LOW, DQ[15:0] will continue to output valid data.
LB#/UB#
ACLK
BOE
CBPH
CEM
CLK
CSP
A[22:0]
ADV#
WAIT
LOW; WAIT asserted during delay.
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IH
IH
IL
IH
IL
IL
IH
IL
IL
IH
IL
IH
IL
OH
OL
OH
OL
High-Z
MIN MAX MIN MAX MIN MAX
9.62
5
3
-701
t
t
CSP
ADDRESS
SP
t
t
SP
SP
VALID
t
SP
20
7
4
t
t
t
HD
HD
HD
High-Z
12.5
6
4
-708
t
OLZ
t
ACLK
20
9
4
t
t
BOE
CLK
Figure 37: READ Burst Suspend
OUTPUT
15
VALID
8
5
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
-856
t
KOH
11
20
4
OUTPUT
VALID
UNITS
ns
ns
ns
µs
ns
ns
OUTPUT
VALID
t
44
CEM
SYMBOL
t
t
t
t
t
t
HD
HZ
KOH
OHZ
OLZ
SP
OUTPUT
VALID
t
OHZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MIN MAX MIN MAX MIN MAX
NOTE 3
2
2
3
3
-701
t
OLZ
NOTE 2
8
8
t
BOE
2
2
3
3
OUTPUT
-708
VALID
©2004 Micron Technology, Inc. All rights reserved.
8
8
DON’T CARE
8 MEG x 16
OUTPUT
VALID
t
HD
2
2
3
3
-856
t
OHZ
t
t
HZ
CBPH
High-Z
8
8
UNDEFINED
ADDRESS
VALID
UNITS
ns
ns
ns
ns
ns
ns