MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 46

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

Table 29: Asynchronous WRITE Timing Parameters—CE#-Controlled
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
SYMBOL
t
t
t
t
t
t
t
t
AS
AW
BW
CEW
CPH
CW
DH
DW
MIN
70
70
70
20
0
1
5
0
-701/708
MAX
DQ[15:0]
DQ[15:0]
7.5
LB#/UB#
Figure 39: CE#-Controlled Asynchronous WRITE
A[22:0]
ADV#
WAIT
WE#
OUT
OE#
CE#
IN
MIN
85
85
85
20
0
1
5
0
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IH
IH
IH
IH
IH
OH
IH
IL
IL
IL
IL
IL
IL
OL
IL
-856
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
MAX
7.5
t AS
High-Z
t LZ
t WPH
t CEW
High-Z
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
t WHZ
46
t AW
t BW
t CW
t WC
VALID ADDRESS
SYMBOL
t
t
t
t
t
t
t
HZ
LZ
WC
WHZ
WP
WPH
WR
t WP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
VALID INPUT
t DW
t HZ
MIN
10
70
45
10
0
-701/708
t WR
t DH
DON’T CARE
t CPH
High-Z
MAX
8
8
©2004 Micron Technology, Inc. All rights reserved.
MIN
10
85
55
10
8 MEG x 16
0
-856
MAX
8
8
UNITS
ns
ns
ns
ns
ns
ns
ns