MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 21

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

Table 4:
Burst Length (BCR[2:0])
Default = Continuous Burst
outputs during burst READ and WRITE operations. The
device supports a burst length of 4, 8, 16, or 32 words.
The device can also be set in continuous burst mode
where data is accessed sequentially without regard to
address boundaries; the internal address wraps to
000000h if the burst goes past the last address.
Burst Wrap (BCR[3]) Default = No Wrap
32-word READ or WRITE burst wraps within the burst
length, or steps through sequential addresses. If the
wrap option is not enabled, the device accesses data
from sequential addresses without regard to burst
boundaries; the internal address wraps to 000000h if
the burst goes past the last address.
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
BCR[3] WRAP (DECIMAL)
BURST WRAP
Burst lengths define the number of words the device
The burst-wrap option determines if a 4-, 8-, 16-, or
0
1
Yes
No
STARTING
ADDRESS
Sequence and Burst Length
14
15
30
31
14
15
30
31
...
...
...
...
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
LENGTH
LINEAR
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
0-1-2-3
1-2-3-4
2-3-4-5
3-4-5-6
WORD
BURST
4-
7-8-9-10-11-12-13-14
6-7-8-9-10-11-12-13
5-6-7-8-9-10-11-12
4-5-6-7-8-9-10-11
BURST LENGTH
3-4-5-6-7-8-9-10
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-8
2-3-4-5-6-7-8-9
8-WORD
LINEAR
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
6-7-8-9-10-11-12-13-14-...-16-17-18-19-20-21
5-6-7-8-9-10-11-12-13-...-15-16-17-18-19-20
14-15-16-17-18-19-...-23-24-25-26-27-28-29
15-16-17-18-19-20-...-24-25-26-27-28-29-30
4-5-6-7-8-9-10-11-12-13-14-15-16-17-18-19
7-8-9-10-11-12-13-14-...-17-18-19-20-21-22
3-4-5-6-7-8-9-10-11-12-13-14-15-16-17-18
2-3-4-5-6-7-8-9-10-11-12-13-14-15-16-17
1-2-3-4-5-6-7-8-9-10-11-12-13-14-15-16
0-1-2-3-4-5-6-7-8-9-10-11-12-13-14-15
1-2-3-4-5-6-7-8-9-10-11-12-13-14-15-0
2-3-4-5-6-7-8-9-10-11-12-13-14-15-0-1
3-4-5-6-7-8-9-10-11-12-13-14-15-0-1-2
4-5-6-7-8-9-10-11-12-13-14-15-0-1-2-3
5-6-7-8-9-10-11-12-13-14-15-0-1-2-3-4
6-7-8-9-10-11-12-13-14-15-0-1-2-3-4-5
7-8-9-10-11-12-13-14-15-0-1-2-3-4-5-6
14-15-0-1-2-3-4-5-6-7-8-9-10-11-12-13
15-0-1-2-3-4-5-6-7-8-9-10-11-12-13-14
0-1-2-3-4-5-6-7-8-9-10-11-12-13-14-15
16-WORD BURST LENGTH
21
Drive Strength (BCR[5:4])
Default = Outputs Use Half-Drive Strength
one-half, or one-quarter strength to adjust for different
data bus loading scenarios. The reduced-strength
options are intended for stacked chip (Flash + Cellular-
RAM) environments when there is a dedicated memory
bus. The reduced-drive-strength option minimizes the
noise generated on the data bus during READ opera-
tions. Full output drive strength should be selected
when using a discrete CellularRAM device in a more
heavily loaded data bus environment. Outputs are con-
figured at half-drive strength during testing. See Table 5
on page 22 for additional information.
LINEAR
...
...
The output driver strength can be altered to full,
Micron Technology, Inc., reserves the right to change products or specifications without notice.
14-15-16-...-11-12-13
15-16-17-...-12-13-14
14-15-16-...-43-44-45
15-16-17-...-44-45-46
30-31-32-...-59-60-61
31-32-33-...-60-61-62
30-31-0-...-27-28-29
31-0-1-...-28-29-30
0-1-2-...-29-30-31
0-1-2...--29-30-31
1-2-3-...-30-31-32
2-3-4-...-31-32-33
3-4-5-...-32-33-34
4-5-6-...-33-34-35
5-6-7-...-34-35-36
6-7-8-...-35-36-37
7-8-9-...-36-37-38
BURST LENGTH
1-2-3-...-30-31-0
2-3-4-...-31-0-1
3-4-5-...-0-1-2
4-5-6-...-1-2-3
5-6-7-...-2-3-4
6-7-8-...-3-4-5
7-8-9-...-4-5-6
32-WORD
LINEAR
...
...
...
...
©2004 Micron Technology, Inc. All rights reserved.
8 MEG x 16
14-15-16-17-18-19-20-…
15-16-17-18-19-20-21-…
14-15-16-17-18-19-20-...
15-16-17-18-19-20-21-...
30-31-32-33-34-35-36-...
31-32-33-34-35-36-37-...
CONTINUOUS BURST
7-8-9-10-11-12-13-…
7-8-9-10-11-12-13…
6-7-8-9-10-11-12…
5-6-7-8-9-10-11-…
30-31-32-33-34-...
31-32-33-34-35-...
6-7-8-9-10-11-12-
5-6-7-8-9-10-11…
4-5-6-7-8-9-10-…
4-5-6-7-8-9-10-…
0-1-2-3-4-5-6-…
1-2-3-4-5-6-7-…
2-3-4-5-6-7-8-…
3-4-5-6-7-8-9-…
0-1-2-3-4-5-6-…
1-2-3-4-5-6-7-…
2-3-4-5-6-7-8-…
3-4-5-6-7-8-9-…
LINEAR
...
...
...
...