MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 53

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

NOTE:
Table 36: WRITE Timing Parameters—Burst WRITE Followed by Burst READ
Table 37: READ Timing Parameters—Burst WRITE Followed by Burst READ
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
SYMBOL
SYMBOL
t
t
t
t
t
t
t
1. Non-default BCR settings for burst WRITE followed by burst READ: Fixed or variable latency; latency code two (three
2. A refresh opportunity must be provided every
3. Only fixed latency requires
DQ[15:0]
CBPH
CLK
CSP
ACLK
BOE
CLK
CSP
LB#/UB#
IN/OUT
A[22:0]
ADV#
clocks); WAIT active LOW; WAIT asserted during delay.
conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than 15ns. CE# can stay LOW between burst READ and burst
WRITE operations, but CE# must not remain LOW longer than
pages 54 through 56) for cases where CE# stays LOW between bursts.
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
IH
IL
High-Z
MIN MAX MIN MAX MIN MAX
MIN MAX MIN MAX MIN MAX
9.62
9.62
5
3
3
-701
-701
t CSP
t SP
t SP
t SP
ADDRESS
VALID
20
t HD
20
20
t HD
t HD
7
High-Z
12.5
12.5
Figure 46: Burst WRITE Followed by Burst READ
6
4
4
-708
-708
t CLK
t
KADV.
20
20
20
9
t SP
t SP t HD
D[0]
t HD
15
15
5
8
5
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
-856
-856
D[1]
11
20
20
20
t
D[2]
CEM. A refresh opportunity is satisfied by either of the following two
UNITS
UNITS
ns
ns
ns
ns
ns
ns
ns
D[3]
t HD
t KADV
53
t CBPH
NOTE 2
SYMBOL
t
t
t
t
SYMBOL
t
t
t
3
HD
KOH
OHZ
SP
HD
KADV
SP
t
CEM. See burst interrupt diagrams (Figures 47–49,
t CSP
t SP t HD
t SP
t SP t HD
V
V
ADDRESS
OH
OL
VALID
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t HD
High-Z
MIN MAX MIN MAX MIN MAX
MIN MAX MIN MAX MIN MAX
2
2
3
2
4
3
-701
-701
t ACLK
t BOE
8
OUTPUT
VALID
t KOH
2
6
3
2
2
3
-708
-708
OUTPUT
©2004 Micron Technology, Inc. All rights reserved.
VALID
8
DON’T CARE
8 MEG x 16
OUTPUT
VALID
2
6
3
2
2
3
-856
-856
OUTPUT
VALID
8
t OHZ
UNDEFINED
High-Z
UNITS
UNITS
ns
ns
ns
ns
ns
ns
ns