MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 35

IC PSRAM 128MBIT 70NS 54VFBGA

MT45W8MW16BGX-708 WT TR

Manufacturer Part Number
MT45W8MW16BGX-708 WT TR
Description
IC PSRAM 128MBIT 70NS 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT45W8MW16BGX-708 WT TR

Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
128M (8Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1010-2
Table 18: Burst WRITE Cycle Timing Requirements
NOTE:
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
PARAMETER
Address and ADV# LOW setup time
Address Hold from ADV# HIGH (Fixed Latency)
CE# HIGH between Subsequent Burst or Mixed-
Mode Operations
Maximum CE# Pulse Width
CE# LOW to WAIT Valid
Clock Period
CE# Setup to CLK Active Edge
Hold Time from Active CLK Edge
Chip Disable to WAIT High-Z Output
Last Clock to ADV# LOW (Fixed Latency)
CLK Rise or Fall Time
Clock to WAIT Valid
CLK HIGH or LOW Time
Setup Time to Activate CLK Edge
1.
2. A refresh opportunity must be provided every
3. Low-Z to High-Z timings are tested with the circuit shown in Figure 27 on page 31. The High-Z timings measure a 100mV
t
conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than 15ns.
transition from either V
AS required if
t
CSP > 20ns.
OH
or V
OL
toward V
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
CC
Q/2.
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AS
AVH
CBPH
CEM
CEW
CLK
CSP
HD
HZ
KADV
KHKL
KHTL
KP
SP
t
CEM. A refresh opportunity is satisfied by either of the following two
35
MIN
9.62
0
2
5
1
3
2
4
3
3
-701
MAX
7.5
1.6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
4
8
7
MIN
12.5
0
2
6
1
4
2
6
4
3
-708
MAX
7.5
1.8
4
8
9
MIN
15
0
2
8
1
5
2
6
5
3
-856
©2004 Micron Technology, Inc. All rights reserved.
MAX
7.5
2.0
8 MEG x 16
11
4
8
UNITS
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
1
2
2
3

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