MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 38

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

Table 21: Asynchronous READ Timing Parameters Using ADV#
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
SYMBOL
t
t
t
t
t
t
t
t
t
AA
AADV
AVH
AVS
BA
BHZ
BLZ
CEW
CO
MIN
10
2
5
1
-701/708
MAX
7.5
70
70
70
70
8
DQ[15:0]
LB#/UB#
A[22:0]
Figure 31: Asynchronous READ Using ADV#
ADV#
WAIT
WE#
OE#
CE#
MIN
10
2
5
1
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IH
IH
IH
IH
IH
OH
IH
IL
IL
IL
IL
IL
IL
OL
IL
-856
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
MAX
t VPH
7.5
85
85
85
85
8
High-Z
t CEW
High-Z
t CVS
UNITS
t VP
VALID ADDRESS
t AVS
ns
ns
ns
ns
ns
ns
ns
ns
ns
t LZ
t AADV
t BLZ
t CO
t AVH
t AA
38
t OLZ
t BA
SYMBOL
t
t
t
t
t
t
t
t
CVS
HZ
LZ
OE
OHZ
OLZ
VP
VPH
t OE
DON’T CARE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
VALID OUTPUT
t
HZ
MIN
10
10
7
3
5
-701/708
t
t
UNDEFINED
t
HZ
OHZ
BHZ
High-Z
MAX
20
8
8
©2004 Micron Technology, Inc. All rights reserved.
MIN
10
10
8 MEG x 16
7
3
7
-856
MAX
20
8
8
UNITS
ns
ns
ns
ns
ns
ns
ns
ns