LH28F160S3T-L10A Sharp Microelectronics, LH28F160S3T-L10A Datasheet - Page 47

• Manufacturer Part Number: LH28F160S3T-L10A
• Description: IC FLASH 16MBIT 100NS 56TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F160S3T-L10A

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (2M x 8 or 1M x 16)
• Speed: 100ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 56-TSOP
• Lead Free Status / RoHS Status: Contains lead / Request inventory verification
• Other names: 425-1838; LHF16KA6

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6.2.7 RESET OPERATIONS
NOTES:
1. If RP# is asserted while a block erase, full chip erase, (multi) word/byte write or block lock-bit configuration
2. A reset time, t
3. When the device power-up, holding RP# low minimum 100ns is required after V
Symbol
t
t
t
PLPH
PLRH
23VPH
operation is not executing, the reset will complete within 100ns.
and also has been in stable there.
RP# Pulse Low Time
(If RP# is tied to V
not applicable)
RP# Low to Reset during Block Erase,
Full Chip Erase, (Multi) Word/Byte Write
or Block Lock-Bit Configuration
V
V
CC
CC
at 2.7V to RP# High
at 3.0V to RP# High
PHQV
STS(R)
STS(R)
RP#(P)
RP#(P)
RP#(P)
V
CC
, is required from the latter of STS going High Z or RP# going high until outputs are valid.
High Z
High Z
2.7/3.3V
Parameter
V
V
V
V
V
V
V
V
V
OL
OL
IH
IL
IH
IL
IH
IL
IL
CC
, this specification is
Figure 21. AC Waveform for Reset Operation
(B)Reset During Block Erase, Full Chip Erase, (Multi) Word/Byte Write
t
t
PLPH
PLPH
or Block Lock-Bit Configuretion
Reset AC Specifications
(A)Reset During Read Array Mode
LHF16KA6
(C)V
t
t
PLRH
23VPH
Notes
1,2
CC
3
Power Up Timing
Min.
100
100
V
CC
=2.7V
Max.
21.5
CC
has been in predefined range
Min.
100
100
V
CC
=3.3V
Max.
21.1
Rev. 2.0
Unit
ns
µs
ns
45