LH28F160S3T-L10A Sharp Microelectronics, LH28F160S3T-L10A Datasheet - Page 42

IC FLASH 16MBIT 100NS 56TSOP

LH28F160S3T-L10A

Manufacturer Part Number
LH28F160S3T-L10A
Description
IC FLASH 16MBIT 100NS 56TSOP
Manufacturer
Sharp Microelectronics
Datasheet

Specifications of LH28F160S3T-L10A

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (2M x 8 or 1M x 16)
Speed
100ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
56-TSOP
Lead Free Status / RoHS Status
Contains lead / Request inventory verification
Other names
425-1838
LHF16KA6

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LH28F160S3T-L10A
Manufacturer:
SHARP
Quantity:
6 333
Part Number:
LH28F160S3T-L10A
Manufacturer:
SHARP
Quantity:
20 000
sharp
NOTES:
1. Read timing characteristics during block erase, full chip erase, (multi) wrod/byte write and block lock-bit
2. Sampled, not 100% tested.
3. Refer to Table 4 for valid A
4. V
5. See Ordering Information for device speeds (valid operational combinations).
6. BYTE# should be in stable until determination of block erase, full chip erase, (multi) word/byte write, block lock-
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
SHWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHRL
WHGL
QVVL
QVSL
FVWH
WHFV
Sym.
configuration operations are the same as during read-only operations. Refer to AC Characteristics for read-only
operations.
configuration.
block lock-bit configuration success (SR.1/3/4/5=0).
bit configuration or STS configuration success (SR.7=1).
PP
should be held at V
Write Cycle Time
RP# High Recovery to WE# Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
WP# V
V
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to STS Going Low
Write Recovery before Read
V
WP# V
BYTE# Setup to WE# Going High
BYTE# Hold from WE# High
PP
PP
Setup to WE# Going High
Hold from Valid SRD, STS High Z
IH
IH
Setup to WE# Going High
Hold from Valid SRD, STS High Z
PPH1/2/3
IN
and D
Parameter
Versions
until determination of block erase, full chip erase, (multi) word/byte write or
IN
V
for block erase, full chip erase, (multi) word/byte write or block lock-bit
CC
(5)
=3.3V±0.3V, T
LHF16KA6
A
=0°C to +70°C
Notes
2,4
2,4
2
2
2
3
3
NOTE 6
LH28F160S3-L100
Min.
100
100
100
10
50
50
50
10
30
50
1
5
5
0
0
0
Max.
100
Rev. 2.0
Unit
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
40

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