LH28F160S3T-L10A Sharp Microelectronics, LH28F160S3T-L10A Datasheet - Page 48

• Manufacturer Part Number: LH28F160S3T-L10A
• Description: IC FLASH 16MBIT 100NS 56TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F160S3T-L10A

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (2M x 8 or 1M x 16)
• Speed: 100ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 56-TSOP
• Lead Free Status / RoHS Status: Contains lead / Request inventory verification
• Other names: 425-1838; LHF16KA6

sharp
6.2.8 BLOCK ERASE, FULL CHIP ERASE, (MULTI) WORD/BYTE WRITE AND BLOCK
NOTE:
See 3.3V V
for notes 1 through 3.
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WHQV1
EHQV1
WHQV1
EHQV1
WHQV2
EHQV2
WHQV3
EHQV3
WHQV4
EHQV4
WHRH1
EHRH1
WHRH2
EHRH2
Sym.
LOCK-BIT CONFIGURATION PERFORMANCE
Word/Byte Write Time
(using W/B write, in word
mode)
Word/Byte Write Time
(using W/B write, in byte
mode)
Word/Byte Write Time
(using multi word/byte write)
Block Write Time
(using W/B write, in word
mode)
Block Write Time
(using W/B write, in byte
mode)
Block Write Time
(using multi word/byte write)
Block Erase Time
Full Chip Erase Time
Set Block Lock-Bit Time
Clear Block Lock-Bits Time
Write Suspend Latency Time
to Read
Erase Suspend Latency
Time to Read
CC
Block Erase, Full Chip Erase, (Multi) Word/Byte Write and Block Lock-Bit Configuration Performance
Parameter
V
Notes
CC
2
2
2
2
2
2
2
2
2
=2.7V-3.6V, T
Typ.
V
22.19
22.17
LHF16KA6
19.9
5.76
0.73
1.31
0.37
0.56
17.9
0.56
7.24
15.5
PP
=2.7V-3.6V
(1)
A
=0°C to +70°C
Max.
16.5
10.2
21.5
250
250
250
320
250
8.2
4.1
10
10
(3)
Typ.
V
22.19
22.17
19.9
5.76
0.73
1.31
0.37
0.56
17.9
0.56
7.24
15.5
PP
=3.0V-3.6V
(1)
Max.
16.5
10.2
21.5
250
250
250
320
250
8.2
4.1
10
10
Typ.
12.54
V
13.2
13.2
2.76
0.44
0.87
0.18
0.42
13.4
13.2
0.42
6.73
PP
=4.5V-5.5V
(1)
17.54
Max.
10.9
9.48
180
180
180
320
180
4.8
10
10
2
Rev. 2.0
Unit
µs
µs
µs
µs
µs
µs
s
s
s
s
s
s
46