LH28F160S3T-L10A Sharp Microelectronics, LH28F160S3T-L10A Datasheet - Page 51

IC FLASH 16MBIT 100NS 56TSOP

LH28F160S3T-L10A

Manufacturer Part Number
LH28F160S3T-L10A
Description
IC FLASH 16MBIT 100NS 56TSOP
Manufacturer
Sharp Microelectronics
Datasheet

Specifications of LH28F160S3T-L10A

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (2M x 8 or 1M x 16)
Speed
100ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
56-TSOP
Lead Free Status / RoHS Status
Contains lead / Request inventory verification
Other names
425-1838
LHF16KA6

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Flash memory LHFXXKXX family Data Protection
Noises having a level exceeding the limit specified in this document may be generated under specific
operating conditions on some systems.
Such noises, when induced onto WE# signal or power supply, may be interpreted as false commands, causing
undesired memory updating.
To protect the data stored in the flash memory against unwanted overwriting, systems operating with the flash
memory should have the following write protect designs, as appropriate:
1) Protecting data in specific block
2) Data protection through V
3) Data protection through RP#
Setting the lock bit of the desired block and pulling WP# low disables the writing operation on that block.
By using this feature, the flash memory space can be divided into, for example, the program section
(locked section) and data section (unlocked section).
By controlling WP#, desired blocks can be locked/unlocked through the software.
For further information on setting/resetting lock bit, refer to the chapter 4.12 and 4.13.
When the level of V
disabled. All blocks are locked and the data in the blocks are completely write protected.
For the lockout voltage, refer to the chapter 6.2.3.
When the RP# is kept low during power up and power down sequence such as voltage transition, write
operation on the flash memory is disabled, write protecting all blocks.
For the details of RP# control, refer to the chapter 5.6 and 6.2.7.
PP
is lower than V
PP
PPLK
(lockout voltage), write operation on the flash memory is
Rev. 1.90

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