C8051T622-GMR Silicon Labs, C8051T622-GMR Datasheet - Page 71

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C8051T622-GMR

Manufacturer Part Number
C8051T622-GMR
Description
8-bit Microcontrollers - MCU USB-OTP-16K-QFN24
Manufacturer
Silicon Labs
Datasheet

Specifications of C8051T622-GMR

Rohs
yes
Core
8051
Data Bus Width
8 bit
Processor Series
C8051

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Part Number:
C8051T622-GMR
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13. Program Memory (EPROM)
C8051T622/3 and C8051T326/7 devices include 16 or 8 kB of on-chip byte-programmable EPROM for
program code storage. The EPROM memory can be programmed via the C2 debug and programming
interface when a special programming voltage is applied to the V
programmed in system using an external capacitor on the V
programmable only once (i.e. non-erasable). Table 6.6 on page 31 shows the EPROM specifications.
13.1. Programming the EPROM Memory
13.1.1. EPROM Programming over the C2 Interface
Programming of the EPROM memory is accomplished through the C2 programming and debug interface.
When creating hardware to program the EPROM, it is necessary to follow the programming steps listed
below. Please refer to the “C2 Interface Specification” available at http://www.silabs.com for details on
communicating via the C2 interface. Section “25. C2 Interface” on page 244 has information about C2 reg-
ister addresses for the C8051T622/3 and C8051T326/7.
1. Reset the device using the RST pin.
2. Wait at least 20 ms before sending the first C2 command.
3. Place the device in core reset: Write 0x04 to the DEVCTL register.
4. Set the device to program mode (1st step): Write 0x40 to the EPCTL register.
5. Set the device to program mode (2nd step): Write 0x4A to the EPCTL register.
Note: Devices with a Date Code prior to 1111 should write 0x58 to the EPCTL register.
6. Apply the V
7. Write the first EPROM address for programming to EPADDRH and EPADDRL.
8. Write a data byte to EPDAT. EPADDRH:L will increment by 1 after this write.
9. Poll the EPBusy bit using a C2 Address Read command. Note: If EPError is set at this time, the write
10.If programming is not finished, return to Step 8 to write the next address in sequence, or return to
11. Remove the V
12.Remove program mode (1st step): Write 0x40 to the EPCTL register.
13.Remove program mode (2nd step): Write 0x00 to the EPCTL register.
14.Reset the device: Write 0x02 and then 0x00 to the DEVCTL register.
Important Note: There is a finite amount of time which V
which is cumulative over the life of the device. Refer to Table 6.1 on page 28 for the V
tion.
operation failed.
Step 7 to program a new address.
PP
PP
programming Voltage.
programming Voltage.
C8051T622/3 and C8051T326/7
Rev. 1.1
PP
can be applied without damaging the device,
PP
PP
pin. Each location in EPROM memory is
pin. Additionally, EPROM bytes can be
PP
timing specifica-
71

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