S71GS128NB0 SPANSION [SPANSION], S71GS128NB0 Datasheet - Page 126

• Manufacturer Part Number: S71GS128NB0
• Description: 128N based MCPs
• Manufacturer: SPANSION [SPANSION]

DC Characteristics
Notes:
1. Wireless Temperature (-25ºC < TC < +85ºC); Industrial Temperature (-40ºC < TC < +85ºC).
2. Input signals may overshoot to V
3. Input signals may undershoot to V
4. BCR[5:4] = 00b.
5. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add the
6. ISB (MAX) values measured with PAR set to FULL ARRAY and TCR set to +85°C. To achieve low standby current,
126
Asynchronous Random READ
Initial Access, Burst READ
Asynchronous Page READ
WRITE Operating Current
Output Leakage Current
Continuous Burst READ
current required to drive output capacitance expected in the actual system.
all inputs must be driven to either V
Input Leakage Current
Output High Voltage
Output Low Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
Standby Current
Supply Voltage
Description
Table 26. Electrical Characteristics and Operating Conditions
V
V
V
V
V
IN
IN
IN
IN
I
I
Chip Disabled
Chip Enabled,
Chip Enabled,
IN
OE# = V
Chip Enabled
OL
CE# = V
OH
Conditions
= V
= V
= V
= V
IOUT = 0
IOUT = 0
= 0 to V
CC
= +0.2mA
= -0.2mA
SS
Q + 1.0V for periods less than 2ns during transitions.
CC
CC
CC
CC
CC
- 1.0V for periods less than 2ns during transitions.
Q or 0V
Q or 0V
Q or 0V
Q or 0V
Q or V
IH
CC
CC
or
Q
A d v a n c e
Q
SS
CellularRAM Type 2
Operating Current
.
V
I
I
I
V
V
V
V
I
V
I
CC
I
CC
CC
CC
LO
SB
OH
CC
OL
LI
IH
IL
Q
1
1
2
Symbol
W: 1.8V
80 MHz
66 MHz
80 MHz
66 MHz
J: 1.5V
128 M
I n f o r m a t i o n
64 M
32 M
-70
-85
-70
-85
-70
-85
V
0.80 V
CC
-0.20
1.70
1.70
1.35
Min
Q - 0.4
CC
Q
V
0.20 V
CC
1.95
1.95
1.65
Q + 0.2
Max
180
120
110
0.4
25
20
15
12
35
30
18
15
25
20
1
1
cellRAM_00_A0 October 4, 2004
CC
Q
Units
mA
mA
mA
µA
µA
µA
V
V
V
V
V
V
V
Notes
2
3
4
4
5
5
6