S71GS128NB0 SPANSION [SPANSION], S71GS128NB0 Datasheet - Page 100

• Manufacturer Part Number: S71GS128NB0
• Description: 128N based MCPs
• Manufacturer: SPANSION [SPANSION]

AC Characteristics
Alternate CE# Controlled Erase and Program Operations-
S29GL128N, S29GL256N, S29GL512N
Notes:
1. Not 100% tested.
2. See the “AC Characteristics” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 90 ns, 100ns, and 110 ns speed options are tested with V
100
t
t
JEDEC
t
WHWH1
WHWH2
t
t
t
t
t
t
t
t
t
EHWH
AVWL
DVEH
EHDX
AVAV
GHEL
WLEL
ELEH
EHEL
ELAX
Parameter
= 3 V. AC specifications for 110 ns speed options are tested with V
t
t
WHWH1
WHWH2
t
t
t
Std.
T
t
t
t
CEPH
OEPH
GHEL
t
t
t
t
t
t
t
ASO
AHT
CPH
WH
WC
WS
AS
AH
DS
DH
CP
Description
Write Cycle Time (Note 1)
Address Setup Time
Address Setup Time to OE# low during
toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high
during toggle bit polling
Data Setup Time
Data Hold Time
CE# High during toggle bit polling
OE# High during toggle bit polling
Read Recovery Time Before Write
(OE# High to WE# Low)
WE# Setup Time
WE# Hold Time
CE# Pulse Width
CE# Pulse Width High
Write Buffer Program Operation (Notes 2,
3)
Effective Write Buffer
Program Operation (Notes
2, 4)
Effective Accelerated Write
Buffer Program Operation
(Notes 2, 4)
Program Operation (Note 2)
Accelerated Programming
Operation (Note 2)
Sector Erase Operation (Note 2)
S29GLxxxN MirrorBit
A d v a n c e
Per Word
Per Word
Word
Word
TM
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
Typ
Flash Family
I n f o r m a t i o n
IO
= 1.8 V and V
90
90
100
100
Speed Options
CC
13.5
240
= 3.0 V.
0.5
15
45
45
20
20
35
30
15
60
54
0
0
0
0
0
0
S29GLxxxN_MCP_A1 December 15, 2004
110
110
110
110
IO
= V
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
CC