HYB18T512160A Infineon Technologies AG, HYB18T512160A Datasheet - Page 73

• Manufacturer Part Number: HYB18T512160A
• Description: 512-Mbit Double-Data-Rate-Two SDRAM
• Manufacturer: Infineon Technologies AG

Figure 65
Table 31
Voltage (V)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
Note: The driver characteristics evaluation conditions are:
1. Nominal Default 25
2. Minimum 95
3. Maximum 0
Data Sheet
Full Strength Default Pull-up Driver Diagram
Full Strength Default Pull–down Driver Characteristics
-100
-120
-20
-40
-60
-80
Pull-down Driver Current [mA]
Minimum
8.5
12.1
14.7
16.4
17.8
18.6
19.0
19.3
19.7
19.9
20.0
20.1
20.2
20.3
20.4
20.6
—
—
o
0
o
C (
C (
0
T
T
case
case
o
0,2
C (
).
),
V
V
T
DDQ
DDQ
case
0,4
),
= 1.9 V, fast-fast process
= 1.7V, slow-slow process,
V
0,6
DDQ
Nominal Default low
11.3
16.5
21.2
25.0
28.3
30.9
33.0
34.5
35.5
36.1
36.6
36.9
37.1
37.4
37.6
37.7
37.9
—
= 1.8 V, typical process,
VDDQ to VOUT (V)
0,8
1
1,2
73
1,4
512-Mbit Double-Data-Rate-Two SDRAM
Nominal Default high
11.8
16.8
22.1
27.6
32.4
36.9
40.9
44.6
47.7
50.4
52.6
54.2
55.9
57.1
58.4
59.6
60.9
—
HYB18T512[400/800/160]A[C/F]–[3.7/5]
1,6
1,8
2
AC & DC Operating Conditions
Minimum
Nominal Default Low
Nominal Default High
Maximum
Maximum
15.9
23.8
31.8
39.7
47.7
55.0
62.3
69.4
75.3
80.5
84.6
87.7
90.8
92.9
94.9
97.0
99.1
101.1
09112003-SDM9-IQ3P
Rev. 1.13, 2004-05