HYB18T512160A Infineon Technologies AG, HYB18T512160A Datasheet - Page 13

• Manufacturer Part Number: HYB18T512160A
• Description: 512-Mbit Double-Data-Rate-Two SDRAM
• Manufacturer: Infineon Technologies AG

Figure 1
Notes
1.
Data Sheet
V
DLL.They are isolated on the device from
V
DDL
DDQ
,
and
V
SS
Pin Configuration P-TFBGA-60 ( 4) Top View, see the balls throught the package
and
V
SSDL
V
SSQ
are power and ground for the
.
NC/BA2
V
V
V
V
V
NC
NC
DDQ
1
DDL
DD
DD
SS
A10/AP
V
DQ1
V
V
CKE
BA0
A12
NC
A3
A7
SSQ
SSQ
2
REF
V
DQ3
BA1
WE
V
DM
V
NC
A1
A5
A9
DDQ
3
SS
SS
V
4
DD
,
13
A
B
C
D
E
F
G
H
K
2. Ball position G1 is Not Connected and will be used
3. Ball position L8 is A13 for 512-Mbit and higher and
5
J
L
512-Mbit Double-Data-Rate-Two SDRAM
for BA2 on 1-Gbit memory densities and higher
is Not Connected on 256-Mbit
HYB18T512[400/800/160]A[C/F]–[3.7/5]
6
V
DQS
V
V
DQ2
RAS
CAS
A11
NC
A2
A6
SSDL
SSQ
DDQ
7
NC/A13
DQS
V
DQ0
V
CK
CK
CS
A0
A4
A8
SSQ
SSQ
8
V
V
ODT
V
V
NC
NC
V
DDQ
DDQ
9
DD
DD
SS
09112003-SDM9-IQ3P
Rev. 1.13, 2004-05
Overview
MPPT0010