MC68HC912BD32CFU10 FREESCALE [Freescale Semiconductor, Inc], MC68HC912BD32CFU10 Datasheet - Page 72

• Manufacturer Part Number: MC68HC912BD32CFU10
• Description: Advance Information
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

Flash EEPROM
MC68HC912BD32 Rev 1.0
FSTE — Stress Test Enable
GADR — Gate/Drain Stress Test Select
HVT — Stress Test High Voltage Status
FENLV — Enable Low Voltage
FDISVFP — Disable Status V
VTCK — V
When the V
module will not allow writing to the LAT bit; the user cannot erase or
program the Flash module. The FDISVFP control bit enables writing
to the LAT bit regardless of the voltage on the V
When VTCK is set, the Flash EEPROM module uses the V
control the control gate voltage; the sense amp time-out path is
disabled. This allows for indirect measurements of the bit cells
program and erase threshold. If V
control gate will equal the V
If V
equation:
Vcontrol gate = V
Freescale Semiconductor, Inc.
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0 = Disables the gate/drain stress circuitry
1 = Enables the gate/drain stress circuitry
0 = Selects the drain stress circuitry
1 = Selects the gate stress circuitry
0 = High voltage not present during stress test
1 = High voltage present during stress test
0 = Disables low voltage transistor in current reference circuit
1 = Enables low voltage transistor in current reference circuit
0 = Enable the automatic lock mechanism if V
1 = Disable the automatic lock mechanism if V
0 = V
1 = V
FP
> V
T
T
T
ZBRK
test disable
test enable
Check Test Enable
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FP
Flash EEPROM
pin is below normal programming voltage the Flash
the control gate will be regulated by the following
ZBRK
0.44
FP
FP
Voltage Lock
voltage.
(V
FP
FP
< V
V
ZBRK
ZBRK
(breakdown voltage) the
)
FP
FP
FP
pin.
is low
is low
FP
pin to
4-flash