mc9s12e256 Freescale Semiconductor, Inc, mc9s12e256 Datasheet - Page 566

• Manufacturer Part Number: mc9s12e256
• Description: Hcs12 Microcontrollers 16-bit Microcontroller
• Manufacturer: Freescale Semiconductor, Inc

Appendix A Electrical Characteristics
A.1.9
This section describes the characteristics of all 3.3V/5V I/O pins. All parameters are not always applicable,
e.g., not all pins feature pull up/down resistances.
1
2
3
566
Conditions are shown in
Num
Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half for each
8°C to 12°C in the temperature range from 50°C to 125°C.
Refer to
Parameter only applies in STOP or Pseudo STOP mode.
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
Section A.1.4, “Current Injection”
C
C
C
C
C
C
D
P
T
P
T
P
P
P
P
P
T
P
P
I/O Characteristics
Internal Pull Up Device Current, tested at V
Injection current
Port AD Interrupt Input Pulse filtered
Port AD Interrupt Input Pulse passed
Input High Voltage
Input High Voltage
Input Low Voltage
Input Low Voltage
Input Hysteresis
Input Leakage Current (pins in high ohmic input
mode)
Output High Voltage (pins in output mode)
Output High Voltage (pins in output mode)
Output Low Voltage (pins in output mode)
Output Low Voltage (pins in output mode)
Internal Pull Up Device Current, tested at V
Internal Pull Down Device Current, tested at V
Min.
Internal Pull Down Device Current, tested at V
Max.
Input Capacitance
V
Partial Drive I OH = –2mA
Full Drive IOH = –10mA
Partial Drive IOL = +2mA
Full Drive I OL = +10mA
Single Pin limit
Total Device Limit. Sum of all injected currents
in
1
= V
Table A-4
DD5
or V
2
SS5
unless otherwise noted
Rating
Table A-6. 5V I/O Characteristics
for more details
MC9S12E256 Data Sheet, Rev. 1.08
3
3
IL
IH
Max.
Min.
IH
IL
Symbol
V
t
t
I
I
V
V
I
I
V
V
I
I
PIGN
PVAL
V
V
PUH
PDH
V
V
PUL
PDL
C
HYS
ICS
ICP
I
OH
OH
OL
OL
in
IH
IH
IL
IL
in
V
V
V
0.65*V
SS5
DD5
DD5
–1.0
–2.5
Min
–10
–25
10
10
—
—
—
—
—
—
—
—
—
– 0.3
– 0.8
– 0.8
DD5
Typ
250
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
Freescale Semiconductor
V
0.35*V
DD5
–130
Max
130
1.0
0.8
0.8
2.5
—
—
—
—
—
—
—
—
25
—
3
+ 0.3
DD5
Unit
mV
mA
pF
V
V
V
V
V
V
V
V
A
A
A
A
A
s
s