hyb18m1g16 Qimonda, hyb18m1g16 Datasheet - Page 57

• Manufacturer Part Number: hyb18m1g16
• Description: Drams For Mobile Applications 1-gbit X16 Ddr Mobile-ram Rohs Compliant
• Manufacturer: Qimonda

19) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but system
20) A low level on DQS may be maintained during High-Z states (DQS drivers disabled) by adding a weak pull-down element in the system. It
21) These parameters account for the number of clock cycles and depend on the operating frequency, as follows:
22)
23) A maximum of eight AUTOREFRESH commands can be posted to the DDR Mobile-RAM device, meaning that the maximum absolute
1) Output slew rate is measured between
2) The parameter is measured using a 20pF capacitive load connected to
3) The ratio of the pull-up slew rate to the pull-down slew rate is specified for the same temperature and voltage, over the entire temperature
Rev.1.0, 2007-03
10242006-Y557-TZXW
Parameter
Pull-up and Pull-down Slew Rate
(Full Drive Buffer)
Pull-up and Pull-down Slew Rate
(Half Drive Buffer)
Output Slew Rate Matching Ratio
(Pull-up to Pull-down)
Parameter
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
Maximum overshoot area above
Maximum undershoot area below
performance (bus turnaround) will degrade accordingly.
is recommended to turn off the weak pull-down element during read and write bursts (DQS drivers enabled).
no. of clock cycles = specified delay / clock period; round to the next higher integer.
t
interval between any Refresh command and the next Refresh command is 8 *
and voltage range. For a given output, it represents the maximum difference between pull-up and pull-down drivers due to process
variation.
DAL
= (
t
WR
/
t
CK
) + (
t
RP
/
t
CK
): for each of the terms above, if not already an integer, round to the next higher integer.
V
V
DD
SS
V
ILD(DC)
and
V
IHD(AC)
TBD
TBD
-
Typical Range
(rising) or
57
V
IHD(DC)
V
SSQ
.
0.7
0.3
0.7
and
t
REFI
AC Overshoot / Undershoot Specification
Minimum
V
.
ILD(AC)
Measurement with Reference Load
(falling).
Output Slew Rate Characteristics
2.5
1.0
1.4
0.9
0.9
3.0
3.0
Maximum
Maximum
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
FIGURE 40
TABLE 24
TABLE 25
Unit
V/ns
V/ns
-
Unit
V
V
V-ns
V-ns
Data Sheet
Note
1)2)
1)2)
1)3)
Note
–
–
–
–