hyb18m1g16 Qimonda, hyb18m1g16 Datasheet - Page 40

• Manufacturer Part Number: hyb18m1g16
• Description: Drams For Mobile Applications 1-gbit X16 Ddr Mobile-ram Rohs Compliant
• Manufacturer: Qimonda

Rev.1.0, 2007-03
10242006-Y557-TZXW
Command
Address
DI b = Data In to column b .
An interrupted burst of 4, 8 or 16 is shown, 2 data elements are written.
t
A10 is LOW with the WRITE command (Auto Precharge is disabled)
*1 = can be Don't Care for programmed burst length of 4
*2 = for programmed burst length of 4, DQS becomes Don't Care at this point
WR
DQS
is referenced from the positive clock edge after the last desired Data In pair.
DM
DQ
CK
CK
BA,Col b
WRITE
t
DQSSmax
NOP
Di b
NOP
40
Interrupting WRITE to PRECHARGE (max. t
NOP
t
WR
*2
*1
*1
(or all)
BA a
PRE
HY[B/E]18M1G16[0/1]BF
*1
1-Gbit DDR Mobile-RAM
*1
FIGURE 31
= Don't Care
NOP
Data Sheet
DQSS
)