hyb18m1g16 Qimonda, hyb18m1g16 Datasheet - Page 54

• Manufacturer Part Number: hyb18m1g16
• Description: Drams For Mobile Applications 1-gbit X16 Ddr Mobile-ram Rohs Compliant
• Manufacturer: Qimonda

1) Clock Frequency (fCKmax) 166 MHz (CL = 3) not guaranteed for VDDmin = VDDQmin = 1.70V at Tcmin of extended temperature range
2) See
3) V
4) The value of V
Rev.1.0, 2007-03
10242006-Y557-TZXW
Parameter
Power Supply Voltage
Power Supply Voltage for DQ Output Buffer
Input leakage current
Output leakage current
Address and Command Inputs (BA, BA1, CKE, CS, RAS, CAS, WE)
Input high voltage
Input low voltage
Clock Inputs (CK, CK)
DC input voltage
DC input differential voltage
AC input differential voltage
AC differential cross point voltage
Data Inputs (DQ, DM, DQS)
DC input high voltage
DC input low voltage
AC input high voltage
AC input low voltage
Data Outputs (DQ, DQS)
Output high voltage (
Output low voltage (
ID
is the magnitude of the difference between the input level on CK and the input level on CK.
Table 25
and
IX
is expected to be equal to 0.5 x
Figure 41
I
I
OL
OH
= 0.1 mA)
= -0.1 mA)
for overshoot and undershoot definition.
V
DDQ
and must track variations in the DC level.
V
V
I
I
V
V
V
V
V
V
V
V
V
V
V
V
IL
OL
Symbol
DD
DDQ
IH
IL
IN
ID(DC)
ID(AC)
IX
IHD(DC)
ILD(DC)
IHD(AC)
ILD(AC)
OH
OL
54
1.70
1.70
-1.0
-1.5
0.8 ×
-0.3
-0.3
0.4 ×
0.6 ×
0.4 ×
0.7 ×
-0.3
0.8 ×
-0.3
0.9 ×
–
V
V
V
V
V
V
V
min.
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
Values
1.90
1.90
1.0
1.5
V
0.2 ×
V
V
V
0.6 ×
V
0.3 x V
V
0.2 ×
–
0.1 ×
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
Electrical Characteristics
+ 0.3
+ 0.3
+ 0.6
+ 0.6
+ 0.3
+ 0.3
V
V
V
V
max.
HY[B/E]18M1G16[0/1]BF
DDQ
DDQ
DDQ
DDQ
DDQ
1-Gbit DDR Mobile-RAM
TABLE 22
V
V
µΑ
µA
V
V
V
V
V
V
V
V
V
V
V
V
Unit
Data Sheet
Note
1)2)
1)2)
2)
2)
2)
2)
2)
2)3)
2)3)
2)4)
2)
2)
2)
2)
2)
2)