hyb18m1g16 Qimonda, hyb18m1g16 Datasheet - Page 35

• Manufacturer Part Number: hyb18m1g16
• Description: Drams For Mobile Applications 1-gbit X16 Ddr Mobile-ram Rohs Compliant
• Manufacturer: Qimonda

An example of non-consecutive WRITEs is shown in
Rev.1.0, 2007-03
10242006-Y557-TZXW
Command
Address
DI b (n) = Data In to column b (column n)
3 subsequent elements of Data In are applied in the programmed order following DI b.
3 subsequent elements of Data In are applied in the programmed order following DI n.
Non-interrupted bursts of 4 are shown.
Each WRITE command may be to any active bank
DQS
DQS
DQ
DM
DQ
DM
CK
CK
BA,Col b
WRITE
t
DQSSmin
t
DQSSmax
Di b
NOP
Di b
Figure
BA,Col n
WRITE
26.
35
Di n
NOP
WRITE to WRITE (min. and max. t
Di n
NOP
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
FIGURE 25
= Don't Care
NOP
Data Sheet
DQSS
)