hyb18m1g16 Qimonda, hyb18m1g16 Datasheet - Page 53

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hyb18m1g16

Manufacturer Part Number
hyb18m1g16
Description
Drams For Mobile Applications 1-gbit X16 Ddr Mobile-ram Rohs Compliant
Manufacturer
Qimonda
Datasheet
1) These values are not subject to production test but verified by device characterization.
2) Input capacitance is measured according to JEP147 procedure for measuring capacitance using a vector network analyzer. VDD, VDDQ
3) Although DM is an input-only ball, it’s input capacitance models the input capacitance of the DQ and DQS balls.
Rev.1.0, 2007-03
10242006-Y557-TZXW
Parameter
Input capacitance: CK, CK
Input capacitance: all other input-only balls
Input/output capacitance: DQ, DQS, DM
are applied and all other balls (except the ball under test) are floating. DQ’s should be in high impedance state. This may be achieved by
pulling CKE to low level.
C
C
C
Symbol
I1
I2
IO
53
4.0
2.0
7.0
min.
Values
6.5
6.5
10
max.
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
Pin Capacitances
Unit
pF
pF
pF
TABLE 21
Data Sheet
Note
1)2)3)

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