hyb18m1g16 Qimonda, hyb18m1g16 Datasheet - Page 53
hyb18m1g16
Manufacturer Part Number
hyb18m1g16
Description
Drams For Mobile Applications 1-gbit X16 Ddr Mobile-ram Rohs Compliant
Manufacturer
Qimonda
Datasheet
1.HYB18M1G16.pdf
(65 pages)
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1) These values are not subject to production test but verified by device characterization.
2) Input capacitance is measured according to JEP147 procedure for measuring capacitance using a vector network analyzer. VDD, VDDQ
3) Although DM is an input-only ball, it’s input capacitance models the input capacitance of the DQ and DQS balls.
Rev.1.0, 2007-03
10242006-Y557-TZXW
Parameter
Input capacitance: CK, CK
Input capacitance: all other input-only balls
Input/output capacitance: DQ, DQS, DM
are applied and all other balls (except the ball under test) are floating. DQ’s should be in high impedance state. This may be achieved by
pulling CKE to low level.
C
C
C
Symbol
I1
I2
IO
53
4.0
2.0
7.0
min.
Values
6.5
6.5
10
max.
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
Pin Capacitances
Unit
pF
pF
pF
TABLE 21
Data Sheet
Note
1)2)3)
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