hyb18m1g16 Qimonda, hyb18m1g16 Datasheet - Page 23

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hyb18m1g16

Manufacturer Part Number
hyb18m1g16
Description
Drams For Mobile Applications 1-gbit X16 Ddr Mobile-ram Rohs Compliant
Manufacturer
Qimonda
Datasheet
Rev.1.0, 2007-03
10242006-Y557-TZXW
Parameter
DQ output access time from CK/CK
DQS output access time from CK/CK
DQ & DQS low-impedance time from CK/CK
DQ & DQS high-impedance time from CK/CK
DQS - DQ skew
DQ / DQS output hold time from DQS
Data hold skew factor
Read preamble
Read postamble
ACTIVE to PRECHARGE command period
ACTIVE to ACTIVE command period
DO n = Data Out from column n
Burst Length = 4 in the case shown
CAS Latency = 3 in the case shown
All DQ are valid tAC after the CK edge. All DQ are valid tDQSQ after the DQS edge, regardless of tAC
DQS
DQS
DQ
DQ
CK
CK
tACmax
tACmin
t
CK
CL = 3
CL = 2
t
CK
t
RPRE
t
RPRE
t
DQSCK
t
t
t
t
t
t
t
t
t
t
t
t
t
Symbol
LZ
AC
DQSCK
LZ
HZ
DQSQ
QH
QHS
RPRE
RPST
RAS
RC
AC
t
t
DQSCK
t
CH
23
LZ
t
AC
t
DQSQmax
DO n
t
QH
2.0
2.0
1.0
t
0.9
0.7
0.4
42
60
HP
t
min.
-t
CL
t
DQSQmax
DO n
QHS
t
QH
DO n+1 DO n+2 DO n+3
Basic READ Timing Parameters for DQs
Timing Parameters for READ Command
- 6
5.5
5.5
5.5
0.5
0.65
1.1
1.1
0.6
70,000
DO n+1 DO n+2 DO n+3
max.
t
DQSCK
2.0
2.0
1.0
t
0.9
0.7
0.4
45
65
t
HP
DQSCK
min.
-t
QHS
t
RPST
t
HY[B/E]18M1G16[0/1]BF
QH
1-Gbit DDR Mobile-RAM
- 7.5
t
HZ
6.5
6.5
6.5
0.6
0.75
1.1
1.1
0.6
70,000
t
RPST
t
t
HZ
QH
max.
= Don't Care
FIGURE 13
TABLE 11
Unit
ns
ns
ns
ns
ns
ns
ns
t
t
ns
ns
CK
CK
Data Sheet
Note
1)2)
1)2)
3)
3)
4)
5)
5)
6)
6)

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