mt29f1gxxabb Micron Semiconductor Products, mt29f1gxxabb Datasheet - Page 7

• Manufacturer Part Number: mt29f1gxxabb
• Description: 1gb X8, X16 Nand Flash Memory
• Manufacturer: Micron Semiconductor Products

General Description
Figure 1:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
I/O [7:0]
I/O [15:0]
Functional Block Diagram: 1Gb NAND Flash
LOCK
WE#
WP#
R/B#
CE#
ALE
RE#
CLE
The MT29F1G08 and MT29F1G16 are both 1Gb NAND Flash memory devices. NAND
Flash technology provides a cost-effective solution for applications requiring high-den-
sity, solid-state storage. The MT29F1Gxx devices include standard NAND Flash features
as well as new features designed to enhance system-level performance.
The MT29F1Gxx devices use a multiplexed 8- or 16-bit bus (I/O[7:0] or I/O[15:0]) to
transfer data, address, and instruction information. The five control signals (CLE, ALE,
CE#, RE#, WE#) control the NAND Flash command bus interface protocol. Additional
signals control hardware write protection (WP#), monitor the device ready/busy (R/B#)
state, and enable BLOCK LOCK functions (LOCK).
This hardware interface creates a low-ball-count device with a standard ball arrange-
ment that is the same from one density to another, enabling future upgrades to higher
densities without any board redesign.
MT29F1Gxx devices contain 1,024 erasable blocks. Each block is subdivided into 64 pro-
grammable pages. Each page consists of 2,112 bytes (x8), or 1,056 words (x16). The pages
are further divided into a 2,048-byte data storage region with a separate 64-byte area on
the x8 device; and on the x16 device, separate 1,024-word and 32-word areas. The 64-
byte and 32-word areas are typically used for error correction functions.
On-chip control logic automates PROGRAM and ERASE operations to maximize cycle
endurance. PROGRAM/ERASE endurance is specified at 100,000 cycles when using
appropriate error correction code (ECC) and bad-block-management software.
Control
Control
Logic
I/O
Command Register
Address Register
Status Register
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
1Gb: x8, x16 NAND Flash Memory
Column Decode
Cache Register
Data Register
General Description
©2006 Micron Technology, Inc. All rights reserved.
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