mt29f1gxxabb Micron Semiconductor Products, mt29f1gxxabb Datasheet - Page 53

• Manufacturer Part Number: mt29f1gxxabb
• Description: 1gb X8, X16 Nand Flash Memory
• Manufacturer: Micron Semiconductor Products

Table 17:
Table 18:
Table 19:
Table 20:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
Parameter
Parameter
Description
Parameter
Sequential READ current
PROGRAM current
ERASE current
Standby current (TTL)
Standby current (CMOS)
Input leakage current
Output leakage current
Input high voltage
Input low voltage, all inputs
Output high voltage
Output low voltage
Output low current (R/B#)
Valid block number
Input capacitance
Input/output capacitance (I/O)
Input pulse levels
Input rise and fall times
Input and output timing levels
Output load
DC and Operating Characteristics, V
Valid Blocks
Capacitance
Test Conditions
Notes: 1. Invalid blocks are blocks that contain one or more bad bits. The device may contain bad
Notes: 1. These parameters are verified in device characterization and are not 100 percent tested.
Notes: 1. Verified on device characterization; not 100 percent tested.
Symbol
N
VB
2. Block 00h (the first block) is guaranteed to be valid, and does not require error correction
2. Test conditions: T
2. Outputs tested at full drive strength.
I/O [7:0], I/O [15:0], CE#, CLE, ALE,
blocks after shipping. Additional bad blocks may develop over time; however, the total
number of available blocks will not drop below N
device. Do not erase or program blocks marked “invalid” by the factory.
for up to 1,000 PROGRAM/ERASE cycles.
WE#, RE#, WP#, R/B#, LOCK
t
CE# = V
CYCLE = 50ns; CE# = V
MT29F1GxxABB
V
Symbol
CE# = V
V
OUT
WP# = 0V/V
Device
I
IN
Conditions
OH
I
C
C
I
OL
V
OUT
IH
IO
IN
= 0V to V
OL
MT29F1GxxABA
MT29F1GxxABA
= 0V to V
; WP# = 0V/V
= –100µA
= 100µA
= 0.1V
= 0mA
CC
–
–
–
C
- 0.2V;
= 25°C; f = 1 MHz; V
CC
CC
CC
1,004
Min
MT29F1GxxABB
MT29F1GxxABB
CC
CC
IL
53
;
= 1.65–1.95V
Device
Symbol
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Typ
I
I
I
V
I
I
V
V
I
V
I
IN
CC
CC
CC
SB
SB
–
I
LO
OL
OH
OL
LI
IH
IL
1
2
1
2
3
= 0V.
1Gb: x8, x16 NAND Flash Memory
1 TTL GATE and C
0.8 x V
V
CC
VB
0.0V to 1.8V
Min
–0.3
1,024
3
–
–
–
–
–
–
–
–
Max
- 0.1
during the endurance life of the
Max
Value
V
10
10
5ns
CC
CC
Electrical Characteristics
/2
L
= 30pF
Typ
©2006 Micron Technology, Inc. All rights reserved.
10
10
10
10
–
–
–
–
–
–
–
4
blocks
Unit
Unit
pF
pF
V
0.2 x V
CC
Max
±10
±10
0.1
20
20
20
50
1
–
–
+ 0.3
CC
Notes
1, 2
Notes
Notes
1, 2
1, 2
1, 2
Unit
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V