mt29f1gxxabb Micron Semiconductor Products, mt29f1gxxabb Datasheet
mt29f1gxxabb
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mt29f1gxxabb Summary of contents
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... NAND Flash Memory MT29F1GxxABB Features • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) – Page size x16: 1,056 words (1,024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 1Gb: 1,024 blocks • READ performance – Random READ: 25µs (MAX) – ...
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... After building the part number from the part numbering chart, verify that the part number is offered and valid by using the Micron Parametric Part Search Web site at www.micron.com/products/parametric. If the device required is not on this list, contact the factory. PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__1.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory ...
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... Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 V Power Cycling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 CC Timing Diagrams Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48aTOC.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 3 ©2006 Micron Technology, Inc. All rights reserved. Table of Contents ...
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... Figure 5: Ball Assignment (x16), 63-Ball VFBGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 6: Array Organization for MT29F1G08 (x8 Figure 7: Array Organization for MT29F1G16 (x16 Figure 8: Memory Map (x8 Figure 9: Memory Map (x16 Figure 10: READY/BUSY# Open Drain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Figure 11: tFall and tRise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Figure 12: Iol vs Figure 13 Figure 14: PAGE READ Operation ...
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... BLOCK ERASE Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 Figure 66: RESET Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 Figure 67: 63-Ball VFBGA Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48aLOF.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 5 ©2006 Micron Technology, Inc. All rights reserved. List of Figures ...
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... Table 22: AC Characteristics – Normal Operation Table 23: PROGRAM/ERASE Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48aLOT.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory = 1.65–1.95V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 CC Micron Technology, Inc., reserves the right to change products or specifications without notice. 6 List of Tables ©2006 Micron Technology, Inc. All rights reserved. ...
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... General Description The MT29F1G08 and MT29F1G16 are both 1Gb NAND Flash memory devices. NAND Flash technology provides a cost-effective solution for applications requiring high-den- sity, solid-state storage. The MT29F1Gxx devices include standard NAND Flash features as well as new features designed to enhance system-level performance. ...
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... NC RE# CLE LOCK Vss I/O2 I/ Top View, Ball Down 8 1Gb: x8, x16 NAND Flash Memory General Description CE# WE# R/ Vcc Vcc I/O5 I/O7 I/O4 I/O6 Vss NC NC Micron Technology, Inc., reserves the right to change products or specifications without notice. © ...
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... CLE LOCK H I/O8 I/O1 I/O10 I I/O0 I/O9 I/O3 J Vss I/O2 I/O11 Top View, Ball Down 9 1Gb: x8, x16 NAND Flash Memory General Description CE# WE# R/ I/O5 I/O7 NC I/O12 I/O14 Vcc Vcc I/O6 I/O15 I/O4 I/O13 ...
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... No connect: NC balls are not internally connected. These balls can be driven or left unconnected. Micron Technology, Inc., reserves the right to change products or specifications without notice. 10 1Gb: x8, x16 NAND Flash Memory General Description during power-up, or leave it SS ©2006 Micron Technology, Inc. All rights reserved. ...
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... The internal memory array is accessed on a page basis. When performing READs, a page of data is copied from the memory array into the data register. Once copied to the data register, data is output sequentially, byte by byte on the x8 device, or word by word on the x16 device ...
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... Bytes 2,112 through 4,095 of each page are “out of bounds,” do not exist in the device, and cannot be addressed. PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory 2,112 bytes 2,048 64 2,048 ...
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... LOW LOW BA6 PA5 PA4 BA14 BA13 BA12 Micron Technology, Inc., reserves the right to change products or specifications without notice. 13 1Gb: x8, x16 NAND Flash Memory Addressing I page = (1K + 32) words 1 block = (1K + 32) words x 64 pages = (64K + 2K) words 1 device = (1K + 32) words x 64 pages ...
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... Max Address in Page 0x0000083F 0x0000183F 0x0000283F … … 0xFFFE083F 0xFFFF083F 14 1Gb: x8, x16 NAND Flash Memory 1,023 2,047 • • • Spare area Out of Bounds Addresses in Page 0x00000840–0x00000FFF 0x00010840–0x00010FFF 0x00020840–0x00020FFF 0xFFFE0840–0xFFFE0FFF 0xFFFF0840– ...
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... Max Address in Page 0x0000041F 0x0001041F 0x0002041F … … 0xFFFE041F 0xFFFF041F 15 1Gb: x8, x16 NAND Flash Memory 1,023 1,023 • • • Spare area Out of Bounds Addresses in Page 0x00000420–0x00000FFF 0x00010420–0x00010FFF 0x00020420–0x00020FFF 0xFFFE0420–0x00020FFF 0xFFFF0420– ...
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... Figure 57 on page 64). The CE# “Don’t Care” operation enables the NAND Flash to reside on the same asyn- chronous memory bus as other Flash or SRAM devices. Other devices on the memory bus can then be accessed while the NAND Flash is busy with internal operations. This capability is important for designs that require multiple NAND Flash devices on the same bus ...
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... Data is input on I/O[7:0] for x8 devices, and I/O[15:0] on x16 devices. See Figure 46 on page 57 for additional data input details. READ After a READ command is issued, data is transferred from the memory array to the data register on the rising edge of WE#. R/B# goes LOW for transfer is complete. When data is available in the data register clocked out of the part by RE# going LOW (see Figure 12 on page 21 for timing details) ...
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... Rise are calculated at 10 percent and 90 percent points. 0 2,000 4,000 6,000 8,000 10,000 12,000 1.95V (MAX 1Gb: x8, x16 NAND Flash Memory Bus Operation 1.8 CC Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. ...
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... 0V Micron Technology, Inc., reserves the right to change products or specifications without notice. 19 1Gb: x8, x16 NAND Flash Memory Bus Operation 12kΩ Mode Read mode Command input Address input Write mode Command input Address input Data input Sequential read and data output ...
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... READ STATUS RESET Notes: 1. RANDOM DATA INPUT command is limited to use within a single page. 2. RANDOM DATA READ command is limited to use within a single page. PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory First Cycle Second Cycle 60h D0h 2Ah – ...
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... WE# ALE R/B# RE# I/Ox 00h Address (4 cycles) PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory Command Definitions t R 30h Micron Technology, Inc., reserves the right to change products or specifications without notice. 21 Data output (Serial access) Don‘t Care ©2006 Micron Technology, Inc. All rights reserved. ...
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... A normal PAGE READ (00h-30h) command sequence is issued (see Figure 14 on page 23 for details). The R/B# signal goes LOW for page of data from the memory to the data register. After R/B# returns to HIGH, the PAGE READ CACHE MODE START (31h) command is latched into the command register. R/B# goes LOW for cache register ...
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Figure 14: PAGE READ CACHE MODE CLE CE# WE# ALE t R R/B# RE# I/Ox 30h 00h Address (4 cycles) t DCBSYR1 t DCBSYR2 31h Data output Data output 31h (Serial access) (Serial access) t DCBSYR2 Data output 3fh (Serial ...
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... Rev REA t WHR 00h Byte 0 Byte 1 1 Manufacturer ID Device ID Micron Technology, Inc., reserves the right to change products or specifications without notice. 24 1Gb: x8, x16 NAND Flash Memory Command Definitions 1 1 Byte 2 Byte 3 Byte 4 1 ©2006 Micron Technology, Inc. All rights reserved. ...
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... Page size Spare area size (bytes) Block size (w/o spare) Organization Serial access (MIN) Byte value MT29F1G08ABB MT29F1G16ABB Byte 4 Reserved Planes per die Plane size Reserved Byte value MT29F1GxxABB Notes binary hex. PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN I/O7 I/O6 I/O5 Micron ...
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... ONFI READ ID Operation CLE WE# ALE RE# 90h I/O0-7 PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN 20h 4Fh 4Eh Micron Technology, Inc., reserves the right to change products or specifications without notice. 26 1Gb: x8, x16 NAND Flash Memory Command Definitions 46h 49h ©2006 Micron Technology, Inc. All rights reserved. ...
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... PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN I/O0-7 00h Micron Technology, Inc., reserves the right to change products or specifications without notice. 27 1Gb: x8, x16 NAND Flash Memory Command Definitions P1 … P1022 P1023 9 contain a 16-bit parameter, then bits – ©2006 Micron Technology, Inc. All rights reserved. ...
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... RE# line will result in outputting data, starting from the spec- ified column address. PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory Command Definitions Micron Technology, Inc., reserves the right to change products or specifications without notice. 28 ...
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... Write protect Write protect protect – – – t CLR t REA Status Micron Technology, Inc., reserves the right to change products or specifications without notice. 29 1Gb: x8, x16 NAND Flash Memory Command Definitions Definition 0 = Successful PROGRAM/ERASE 1 = Error in PROGRAM/ERASE 0 = Successful PROGRAM 1 = Error in PROGRAM Ready 1 = Ready ...
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... Address PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev PROG D 10h IN Micron Technology, Inc., reserves the right to change products or specifications without notice. 30 1Gb: x8, x16 NAND Flash Memory Command Definitions t PROG. The READ STATUS 70h Status ©2006 Micron Technology, Inc. All rights reserved. ...
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... Figure 21 on page 32). PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev 85h Address (2 cycles) 10h IN Micron Technology, Inc., reserves the right to change products or specifications without notice. 31 1Gb: x8, x16 NAND Flash Memory Command Definitions t PROG 70h Status ©2006 Micron Technology, Inc. All rights reserved. ...
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... B: With status reads t LPROG, see note 3, Table 23 on page 55. Micron Technology, Inc., reserves the right to change products or specifications without notice. 32 1Gb: x8, x16 NAND Flash Memory Command Definitions t CBSY Address/ 15h 80h 10h data input t PROG Status ...
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... MOVE (35h) command writes to the command register. This transfers a page from mem- ory into the cache register. The written column addresses are ignored even though all 4 address cycles are required. The memory device is now ready to accept the INTERNAL DATA MOVE (85h-10h) command. ...
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... R 85h Address Data Unlimited number of repetitions t BERS erase time. 60h Address D0h 34 1Gb: x8, x16 NAND Flash Memory Command Definitions t PROG 70h Status Address 85h Data 10h (2 cycles) t BERS 70h Micron Technology, Inc., reserves the right to change products or specifications without notice. ...
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... One-Time Programmable (OTP) Area This Micron NAND Flash device offers a protected, one-time programmable NAND Flash memory area. Ten full pages (2,112 bytes or 1,056 words per page) of OTP data is available on the device, and the entire range is guaranteed to be good. The OTP area is accessible only through the OTP commands. Customers can use the OTP area in any way they desire ...
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... bytes serial input 1 x8 device 2,112 bytes x16 device 1,056 words Micron Technology, Inc., reserves the right to change products or specifications without notice. 36 1Gb: x8, x16 NAND Flash Memory Command Definitions t PROG t WB 10h 70h PROGRAM READ STATUS command command OTP data written (following " ...
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... PROGRAM command OTP address Micron Technology, Inc., reserves the right to change products or specifications without notice. 37 1Gb: x8, x16 NAND Flash Memory Command Definitions t PROG. The READ STATUS (70h) com PROG 70h READ STATUS command OTP data protected © ...
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... Finally, issue the 30h command while the data is moved from the OTP page to the data register. The OTP Col 00h 1 add 2 page OTP address 38 1Gb: x8, x16 NAND Flash Memory Command Definitions OUT OUT 30h Busy Micron Technology, Inc., reserves the right to change products or specifications without notice. © ...
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... The other page address bits should be “0” (see Figure 30 on page 41). PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory Command Definitions Micron Technology, Inc., reserves the right to change products or specifications without notice. 39 ...
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... Block 0002 Block 0001 Block 0000 PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory 3FCh Upper block boundary 3F8h Lower block boundary 3FCh Upper block boundary 3F8h Lower block boundary Micron Technology, Inc., reserves the right to change products or specifications without notice. ...
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... BA14 BA13 BA12 BA11 Block Block 23h add 1 add 2 UNLOCK Lower boundary Micron Technology, Inc., reserves the right to change products or specifications without notice. 41 1Gb: x8, x16 NAND Flash Memory Command Definitions I/O3 I/O2 I/O1 LOW LOW Invert Area Bit BA10 BA9 Block Block 24h add 1 ...
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... Rev. E 1/08 EN 2Ah LOCK command t LBSY. The PROGRAM or ERASE operation does not 2Ch LOCK-TIGHT command Micron Technology, Inc., reserves the right to change products or specifications without notice. 42 1Gb: x8, x16 NAND Flash Memory Command Definitions ©2006 Micron Technology, Inc. All rights reserved. ...
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... Block is unlocked and device is not locked-tight PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN Address/data input CONFIRM > 100ns I/O[7: Micron Technology, Inc., reserves the right to change products or specifications without notice. 43 1Gb: x8, x16 NAND Flash Memory Command Definitions t LBSY 70h READ STATUS I/O2 (Lock#) I/O1 (LT ...
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... PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev WHRIO 7Ah Add 1 Add 2 BLOCK LOCK Block address READ STATUS Micron Technology, Inc., reserves the right to change products or specifications without notice. 44 1Gb: x8, x16 NAND Flash Memory Command Definitions Status ©2006 Micron Technology, Inc. All rights reserved. ...
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... LOCK command UNLOCK command with invert area bit = 1 UNLOCK command invert area bit = 0 WP# LOW > 100ns Micron Technology, Inc., reserves the right to change products or specifications without notice. 45 1Gb: x8, x16 NAND Flash Memory Command Definitions Power-up with LOCK LOW (default) BLOCK LOCK function ...
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... RESET Operation RESET FFh The RESET command is used to put the memory device into a known condition and to abort a command sequence in progress. READ, PROGRAM, and ERASE commands can be aborted while the device is in the busy state. The contents of the memory location being programmed or the block being erased are no longer valid. The command register is cleared and is ready for the next command. The status register contains the value E0h when WP# is HIGH ...
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... PROGRAMMABLE I/O DRIVE STRENGTH B8h The B8h command is used to change the default I/O drive strength as shown in Figure 38. Drive strength should be selected based on expected memory bus loading. There are four allowable settings for the output drive strength. The settings and the default drive strength are shown in Table 13. The device returns to the default drive strength mode after it is power-cycled ...
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... WCIO t 50 WHIO t WHRIO 100 t WPIO 60h D0h t WW 60h D0h Micron Technology, Inc., reserves the right to change products or specifications without notice. 48 1Gb: x8, x16 NAND Flash Memory Command Definitions Max Unit – ns – ns – ns – ns 250 ns – ns – ns – ...
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... PROGRAM Disable WE# I/Ox WP# R/B# PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev 80h 10h t WW 80h 10h Micron Technology, Inc., reserves the right to change products or specifications without notice. 49 1Gb: x8, x16 NAND Flash Memory Command Definitions ©2006 Micron Technology, Inc. All rights reserved. ...
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... After writing and verifying all locations, the device must be fully erased and checked to verify that each block has erased properly. Over time, some memory locations may fail to program or erase properly. In order to ensure that data is stored properly over the life of the NAND Flash device, certain pre- cautions must be taken, including: • ...
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... Device MT29F1GxxABB MT29F1GxxABB MT29F1GxxABB Short circuit output current, I/Os Table 16: Recommended Operating Conditions Parameter/Condition Operating temperature Commercial Extended V supply voltage MT29F1GxxABB CC Supply voltage PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN Symbol V Supply voltage on any ball relative Storage temperature STG ...
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... 100µs (MIN) FFh 1ms (MAX) Micron Technology, Inc., reserves the right to change products or specifications without notice. 52 1Gb: x8, x16 NAND Flash Memory Electrical Characteristics reaches 1.5V, a minimum of 100µs should CC power cycling). CC 1.8V device: ≈ 1.5V Don’t Care Undefined ©2006 Micron Technology, Inc. All rights reserved. ...
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... CC WE#, RE#, WP#, R/B#, LOCK – –100µ 100µ 0.1V OL Device Min MT29F1GxxABB 1,004 Symbol Device C MT29F1GxxABB IN C MT29F1GxxABB IO = 25° MHz MT29F1GxxABA MT29F1GxxABA 53 1Gb: x8, x16 NAND Flash Memory Electrical Characteristics Min Typ I 1 – – – ...
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... DCBSYR2 REA t REH t RHOH t RHW t RHZ RST WHR is less than 1.7V down to 1.65V 1Gb: x8, x16 NAND Flash Memory Electrical Characteristics Max Unit – ns – ns – ns – ns – ns – ns – ns – ns – ns – ns – ns – ns – ns ...
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... CBSY MAX time depends on timing between internal program completion and data in LPROG = address load time (last page) - data load time (last page). 4. More than 50 percent of the pages will meet typical PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory Symbol Typ NOP – t BERS 2 ...
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... The x16 devices must have I/O[15:8] set to “0.” Figure 45: ADDRESS LATCH Cycle CLE CE# WE# ALE I/Ox Note: The x16 devices must have I/O[15:8] set to “0.” PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory t CLS t CLH ALS t ALH COMMAND t CLS ...
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... Final = 2,112 (x8) or 1,056 (x16). t REA t REH t RHZ OUT OUT 1Gb: x8, x16 NAND Flash Memory Timing Diagrams t CLH Final IN t CHZ t REA COH t RHZ 1 t RHOH D OUT Micron Technology, Inc., reserves the right to change products or specifications without notice. © ...
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... RE# I/Ox Figure 49: PAGE READ Operation CLE CE# WE# ALE R/B# RE# I/Ox 00h Address (4 cycles) PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory t CLR t CLH t CLS CEA t WHR 70h t R 30h Micron Technology, Inc., reserves the right to change products or specifications without notice. ...
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... D D Row OUT OUT 30h add Busy Micron Technology, Inc., reserves the right to change products or specifications without notice. 59 1Gb: x8, x16 NAND Flash Memory Timing Diagrams Data output Don‘t Care t CLR t WHR t REA D Col Col OUT 05h E0h ...
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Figure 52: PAGE READ CACHE MODE Operation, Part CLE t CLS t CLH CE WE# ALE RE Col Col Row I/Ox 00h add 1 add 2 add ...
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Figure 53: PAGE READ CACHE MODE Operation, Part CLE t CLS t CLH CE# WE# t CEA ALE REA D D ...
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Figure 54: PAGE READ CACHE MODE Operation without R/B#, Part CLE t CLS t CLH CE WE# ALE RE Col Col Row Row I/Ox 00h add 1 ...
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Figure 55: PAGE READ CACHE MODE Operation without R/B#, Part CLE t CLS t CLH CE# WE# t CEA ALE REA D D OUT I/Ox ...
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... Manufacturer ID Device ID Data input CE WE# Micron Technology, Inc., reserves the right to change products or specifications without notice. 64 1Gb: x8, x16 NAND Flash Memory Timing Diagrams 1 1 Byte 2 Byte 3 Byte 4 1 Data input Don‘t Care ©2006 Micron Technology, Inc. All rights reserved. ...
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... ADL D D Col Col IN IN 85h N N+1 add 1 add 2 RANDOM DATA Column address Serial input INPUT command 65 1Gb: x8, x16 NAND Flash Memory Timing Diagrams PROG 10h 70h PROGRAM READ STATUS command command t ADL PROG 10h ...
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... DATA MOVE CBSY D Col IN 80h 15h add 1 add 2 M PROGRAM Last page input and programming t CSBY: Max 700µs 66 1Gb: x8, x16 NAND Flash Memory Timing Diagrams t ADL PROG Row Data Data 10h add READ STATUS Busy t ADL PROG ...
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Figure 62: PROGRAM PAGE CACHE MODE Operation Ending on 15h CLE CE WE# ALE RE# Col Col Row Row I/Ox 80h add 1 add 2 add 1 add Serial data Serial ...
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... ERASE SETUP command RST FFh RESET command Micron Technology, Inc., reserves the right to change products or specifications without notice. 68 1Gb: x8, x16 NAND Flash Memory Timing Diagrams t BERS 70h Status READ STATUS command Busy ©2006 Micron Technology, Inc. All rights reserved. Don‘t Care ...
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... C L 5.25 ±0.05 ® their respective owners. ment and data characterization sometimes occur. 69 1Gb: x8, x16 NAND Flash Memory Package Dimensions Solder ball material: 96.5% Sn, 3%Ag, 0.5% Cu Substrate material: Plastic laminate Mold compound: Epoxy novolac Ball A1 ID 1.00 MAX Micron Technology, Inc., reserves the right to change products or specifications without notice. ...
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... Rev 10/06 • Initial release. PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN Power Cycling and Figure 43: AC Waveforms During Power Transitions on Micron Technology, Inc., reserves the right to change products or specifications without notice. 70 1Gb: x8, x16 NAND Flash Memory Revision History t t LBSY and t t OBSY (MAX) to 30µ ...