mt29f1gxxabb Micron Semiconductor Products, mt29f1gxxabb Datasheet - Page 54

• Manufacturer Part Number: mt29f1gxxabb
• Description: 1gb X8, X16 Nand Flash Memory
• Manufacturer: Micron Semiconductor Products

Table 21:
Table 22:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
Parameter
Parameter
ALE to data start
ALE hold time
ALE setup time
CE# hold time
CLE hold time
CLE setup time
CE# setup time
Data hold time
Data setup time
WRITE cycle time
WE# pulse width HIGH
WE# pulse width
WP# setup time
ALE to RE# delay
CE# access time
CE# HIGH to output High-Z
CLE to RE# delay
CE# HIGH to output hold
Cache busy in PAGE READ CACHE MODE (first 31h)
Cache busy in PAGE READ CACHE MODE (next 31h and 3Fh)
Ouput High-Z to RE# LOW
Data transfer from Flash array to data register
READ cycle time
RE# access time
RE# HIGH hold time
RE# HIGH to output hold
RE# HIGH to WE# LOW
RE# HIGH to output High-Z
RE# pulse width
Ready to RE# LOW
Reset time (READ/PROGRAM/ERASE/power-up)
WE# HIGH to busy
WE# HIGH to RE# LOW
AC Characteristics – Command, Data, and Address Input
AC Characteristics – Normal Operation
Notes: 1. Timing for
Notes: 1. AC characteristics may need to be relaxed if I/O drive strength is not set to full.
2. Transition is measured ±200mV from steady-state voltage with load. This parameter is sam-
3. When V
4. If RESET (FFh) command is loaded at ready state, the device goes busy for maximum 5µs.
5. Do not issue a new command during
with the first rising edge of WE# data output.
pled and not 100 percent tested.
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
ADL
ALH
ALS
CH
CLH
CLS
CS
DH
DS
WC
WH
WP
WW
CC
is less than 1.7V down to 1.65V,
t
ADL begins in the ADDRESS cycle, on the final rising edge of WE#, and ends
Min
100
54
10
25
10
10
25
25
10
20
45
15
25
30
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AR
CEA
CHZ
CLR
COH
DCBSYR1
DCBSYR2
IR
R
RC
REA
REH
RHOH
RHW
RHZ
RP
RR
RST
WB
WHR
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WB, even if R/B# is ready.
t
1Gb: x8, x16 NAND Flash Memory
t
RC MIN is 60ns.
DCBSYR1
Min
100
10
10
15
50
15
15
25
20
80
–
–
–
0
–
–
–
–
–
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
Electrical Characteristics
5/10/500/
1,000
Max
100
100
45
45
25
25
30
3
–
–
–
–
–
–
–
–
–
–
–
©2006 Micron Technology, Inc. All rights reserved.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ns
ns
ns
ns
ns
µs
µs
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
Notes
Notes
1, 4, 5
1, 3
1, 2
1, 4
1,2
1,2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1