mt29f1gxxabb Micron Semiconductor Products, mt29f1gxxabb Datasheet - Page 21

• Manufacturer Part Number: mt29f1gxxabb
• Description: 1gb X8, X16 Nand Flash Memory
• Manufacturer: Micron Semiconductor Products

READ Operations
PAGE READ 00h-30h
Figure 12:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
WE#
R/B#
I/Ox
ALE
CLE
CE#
RE#
00h
PAGE READ Operation
To enter READ mode, write a 00h command to the device, then specify the starting
address via the ADDRESS cycles, and finally, issue the 30h command. At this point, the
device enters a busy state while it retrieves data from the NAND Flash array. During this
time, the ready/busy status of the device can be monitored using the R/B# or the READ
STATUS (70h) command.
The R/B# signal is LOW when the device is busy retrieving data from the NAND Flash
array. When R/B# returns to HIGH, data is ready for output. Pulsing the RE# line results
in data output on the I/O lines. Note that the first byte or word of data output is that
which was specified in the ADDRESS cycle. Each pulse of the RE# signal increases the
address counter by one, so additional address cycles are not required when reading
sequential data.
If the system does not have a R/B# signal, NAND Flash device status can be monitored
by issuing a READ STATUS (70h) command, then reading bit 5 or 6 from the status regis-
ter (0 = busy; 1 = ready). If the READ STATUS command is used to monitor the data
transfer, the user must re-issue the READ (00h) command to initiate data output from
the data register. The user can issue 00h only after R/B# goes HIGH or the status register
value is E0h. See Figure 54 on page 62 and Figure 55 on page 63 for examples.
Address (4 cycles)
30h
21
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t R
1Gb: x8, x16 NAND Flash Memory
Command Definitions
©2006 Micron Technology, Inc. All rights reserved.
(Serial access)
Data output
Don‘t Care