mt29f1gxxabb Micron Semiconductor Products, mt29f1gxxabb Datasheet - Page 21
mt29f1gxxabb
Manufacturer Part Number
mt29f1gxxabb
Description
1gb X8, X16 Nand Flash Memory
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT29F1GXXABB.pdf
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READ Operations
PAGE READ 00h-30h
Figure 12:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
WE#
R/B#
I/Ox
ALE
CLE
CE#
RE#
00h
PAGE READ Operation
To enter READ mode, write a 00h command to the device, then specify the starting
address via the ADDRESS cycles, and finally, issue the 30h command. At this point, the
device enters a busy state while it retrieves data from the NAND Flash array. During this
time, the ready/busy status of the device can be monitored using the R/B# or the READ
STATUS (70h) command.
The R/B# signal is LOW when the device is busy retrieving data from the NAND Flash
array. When R/B# returns to HIGH, data is ready for output. Pulsing the RE# line results
in data output on the I/O lines. Note that the first byte or word of data output is that
which was specified in the ADDRESS cycle. Each pulse of the RE# signal increases the
address counter by one, so additional address cycles are not required when reading
sequential data.
If the system does not have a R/B# signal, NAND Flash device status can be monitored
by issuing a READ STATUS (70h) command, then reading bit 5 or 6 from the status regis-
ter (0 = busy; 1 = ready). If the READ STATUS command is used to monitor the data
transfer, the user must re-issue the READ (00h) command to initiate data output from
the data register. The user can issue 00h only after R/B# goes HIGH or the status register
value is E0h. See Figure 54 on page 62 and Figure 55 on page 63 for examples.
Address (4 cycles)
30h
21
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t R
1Gb: x8, x16 NAND Flash Memory
Command Definitions
©2006 Micron Technology, Inc. All rights reserved.
(Serial access)
Data output
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