mt29f1gxxabb Micron Semiconductor Products, mt29f1gxxabb Datasheet - Page 11

• Manufacturer Part Number: mt29f1gxxabb
• Description: 1gb X8, X16 Nand Flash Memory
• Manufacturer: Micron Semiconductor Products

Architecture
Addressing
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
The MT29F1G08 and MT29F1G16 use NAND Flash electrical and command interfaces.
Data, commands, and addresses are multiplexed onto the same signals. This provides a
memory device with a low ball count.
The internal memory array is accessed on a page basis. When performing READs, a page
of data is copied from the memory array into the data register. Once copied to the data
register, data is output sequentially, byte by byte on the x8 device, or word by word on
the x16 device.
The memory array is programmed on a page basis. After the starting address is loaded
into the internal address register, data is sequentially written to the internal data register
up to the end of a page. After all page data has been loaded into the data register, array
programming is started.
In order to increase programming bandwidth, this device incorporates a cache register.
In the cache programming mode, data is first copied into the cache register and then
into the data register. Once the data is copied into the data register, programming
begins. After the data register has been loaded and programming has started, the cache
register becomes available for loading additional data. Loading the next page of data
into the cache register takes place while page programming is in process.
The INTERNAL DATA MOVE command also uses the internal cache register. Normally,
moving data from one area of external memory to another uses a large number of exter-
nal memory cycles. By using the internal cache register and data register, array data can
be copied from one page and then programmed into another without using external
memory cycles.
The MT29F1G08 and MT29F1G16 devices do not have dedicated address balls.
Addresses are loaded using a 4-cycle sequence as shown in Tables 2 and 3 on pages 12
and 13. Table 2 presents address functions internal to the MT29F1G08 device; Table 3
presents address functions internal to the MT29F1G16. See Figures 6 and 7 on pages 14
and 15 for additional memory mapping and addressing details.
11
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1Gb: x8, x16 NAND Flash Memory
©2006 Micron Technology, Inc. All rights reserved.
Architecture