mt29f1gxxabb Micron Semiconductor Products, mt29f1gxxabb Datasheet - Page 42
mt29f1gxxabb
Manufacturer Part Number
mt29f1gxxabb
Description
1gb X8, X16 Nand Flash Memory
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT29F1GXXABB.pdf
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Figure 31:
LOCK-TIGHT 2Ch
Figure 32:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
LOCK Operation
LOCK-TIGHT Operation
WE#
The LOCK-TIGHT (2Ch) command prevents locked blocks from being unlocked and
also prevents unlocked blocks from being locked. When this command is issued, the
UNLOCK (23h) and LOCK (2Ah) commands are disabled. This provides an additional
level of protection to locked blocks from inadvertent PROGRAM and ERASE operations.
To implement the lock-tight state in all of the locked blocks in the device, verify that WP#
is HIGH and then issue the LOCK-TIGHT (2Ch) command.
When a PROGRAM or ERASE operation is issued to a locked block that has also been
locked tight, R/B# goes LOW for
complete. The READ STATUS (70h) command reports bit 7 as “0,” indicating that the
block is protected. PROGRAM and ERASE operations complete successfully to blocks
that were not locked at the time the LOCK-TIGHT command was issued.
Once the LOCK-TIGHT command is issued, it cannot be disabled via a software com-
mand. The only way to disable the lock-tight status is either to hold WP# LOW for greater
than 100ns or to power cycle the device. When the lock-tight status is disabled, all of the
blocks become locked, the same as if the LOCK (2Ah) command were issued.
The LOCK-TIGHT (2Ch) command is disabled if LOCK is LOW at power-on.
WP#
WE#
I/Ox
I/Ox
CLE
CE#
CLE
CE#
LOCK-TIGHT
command
command
LOCK
2Ah
2Ch
42
t
LBSY. The PROGRAM or ERASE operation does not
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1Gb: x8, x16 NAND Flash Memory
Command Definitions
©2006 Micron Technology, Inc. All rights reserved.
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